1/31/2022 | 8541100009 | PARTS OF OPTICAL SFP-MODULES (TRANSCEIVERS) - SEMICONDUCTOR DIODE FOR SUPPRESSION OF TRANSIENT VOLTAGE SURGETS. USED FOR ELECTRICAL SIGNAL CONDUCTING IN THE WORKING CIRCUIT OF THE MODULE. INSTALLED INTO THE WORKING CIRCUIT OF THE TRANSCEIVER INSIDE THE MODULE CASE. | 0.3 | 299.3 | Malaysia | NOVOSIBIRSK AIRPORT TOLMACHEVO | FIBER TRADE LLC |
1/31/2022 | 8541100009 | ELECTRICAL SEMICONDUCTOR DIODES, EXCEPT PHOTODIODES AND LIGHT EMITTING DIODES: DIODE HIGH-FREQUENCY SIGNAL SHUTTING SWITCH, IS INTENDED FOR USE IN HIGH-FREQUENCY RADIO-ELECTRONIC EQUIPMENT SYSTEMS, NOT SCRAP, YAVAR | 0.09 | 837.43 | Thailand | RENAULT TECHNOCENTER | INNOVATIONS AND TECHNOLOGIES LLC |
1/9/2022 | 8541100009 | 1N4148WS SMALL SIZE SIGNAL DIODES - UNIVERSAL DIODES - NON-REPEAT MAX REVERSE VOLTAGE - 100 V - PERIODIC PEAK REVERSE VOLTAGE - 75 V - PERIODIC PEAK FORWARD CURRENT - 300 MA - CONTINUOUS FORWARD CURRENT - 150 | 0.26 | 31.58 | China | RYAZAN OBLAST | PK SKIF LLC |
1/31/2022 | 8541100009 | SIGNAL DIODES OTHER THAN PHOTODIODES OR LIGHT EMITTING DIODES | 15.8 | 1791.37 | China | SHENZHEN CHINA | CONTINENT LOGISTIC LLC |
1/24/2022 | 8541100009 | ELECTRICAL SEMICONDUCTOR DIODES, EXCEPT PHOTODIODES AND LIGHT EMITTING DIODES: DIODE HIGH-FREQUENCY SIGNAL LIMITER, INTENDED FOR USE IN HIGH-FREQUENCY RADIO-ELECTRONIC EQUIPMENT SYSTEMS, NOT SCRAP, NOT WASTE, IS A PRODUCT | 0.12 | 814.14 | Malaysia | RENAULT TECHNOCENTER | INNOVATIONS AND TECHNOLOGIES LLC |
1/24/2022 | 8541100009 | ELECTRICAL SEMICONDUCTOR DIODES, EXCEPT PHOTODIODES AND LIGHT EMITTING DIODES: DIODE HIGH-FREQUENCY SIGNAL SHUTTING SWITCH, IS INTENDED FOR USE IN HIGH-FREQUENCY RADIO-ELECTRONIC EQUIPMENT SYSTEMS, NOT SCRAP, YAVAR | 0.65 | 4812.27 | Thailand | RENAULT TECHNOCENTER | INNOVATIONS AND TECHNOLOGIES LLC |
1/26/2022 | 8541100009 | OTHER SIGNAL DIODES EXCEPT PHOTODIODES OR LIGHT EMITTING DIODES, DIODE, | 12 | 1843.8 | China | NOVOSIBIRSK AIRPORT TOLMACHEVO | ELTEX ENTERPRISE LLC |
1/28/2022 | 8541100009 | DIODES FOR POWER MANAGEMENT BAV70WT1G ; DOUBLE WEAK-SIGNAL DIODES BAT54SWT1G , BAT54S,215 ; SCHOTTKY DIODES BAT165E6327HTSA1 ; PULSE RECTIFYING DIODES MRA4003T3G ; PROTECTIVE DIODES SMBJ12A-TR . TYPE OF SEMICONDUCTOR SILICON. | 5.12 | 1726.36 | China | ST PETERSBURG RUSSIA | ALR LLC |
1/14/2022 | 8541100009 | RECTIFYING DIODE IS A PIN-TYPE SEMICONDUCTOR ELEMENT INTENDED FOR DISTRIBUTION OF ELECTRIC SIGNALS. FOR PRODUCTION OF WIRE HARNESSES ON THE TERRITORY OF THE RUSSIAN FEDERATION. IS NOT A FIRE AUTOMATIC EQUIPMENT. | 2 | 678.26 | Mexico | SCHIPHOL RIJK NETHERLANDS | PES SKK JSC |
1/13/2022 | 8541100009 | DIODES: - LOW-SIGNAL ZENER DIODES MMSZ4690T1G ; LOW-SIGNAL SCHOTTKY DIODES TMMBAT41FILM ; - PROTECTIVE DIODES SMBJ24A-TR AND SMCJ33CA-TR . TYPE OF SEMICONDUCTOR SILICON. | 5.24 | 1673 | China | ST PETERSBURG RUSSIA | ALR LLC |