1/21/2022 | 8541290000 | TRANSISTOR, SERIES BSC072N04LD . THE PRODUCT IS A FIELD TRANSISTOR WITH A MAXIMUM DISPOSIVE POWER OF 65 W AND A WORKING VOLTAGE BETWEEN THE DRAIN-SOURCE OF UP TO 40 V. MADE IN A TDSON-8-4 CASE. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. IMPORTED INTO | 0 | 7.44 | Malaysia | MOSCOW RUSSIA | PLANAR LLC |
1/27/2022 | 8541290000 | MOSFET SERIES OPTIMOSTM3 IPB072N15N3GATMA1 , WITH 300W DISPOSION. TYPE OF SEMICONDUCTOR SILICON. | 2.12 | 1784.27 | Malaysia | ST PETERSBURG RUSSIA | ALR LLC |
1/27/2022 | 8541290000 | TRANSISTORS. ARE ACCESSORIES OF ELECTRICITY METERS SERIES AD11A, AD11B, AD11S, AD13A, AD13B, AD13S, NP71, NP73, REMOTE DISPLAYS FOR CIU8 METER. PRODUCED BY THE COMPANY MATRICA . | 1.5 | 2524.37 | Thailand | Tchev | MATRITSA LLC |
1/29/2022 | 8541290000 | SEMICONDUCTOR DEVICES: N-CHANNEL MOSFET TRANSISTOR. USED IN ELECTRICAL ENGINEERING. VOLTAGE Drain-SOURCE 500V, CURRENT 48A. SCATTERING POWER 500W. DIMENSIONS: 19.96 X 5.13 X 26.16MM. HIPERFET SERIES | 0.03 | 60.3 | Germany | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/27/2022 | 8541290000 | TRANSISTORS. ARE ACCESSORIES OF ELECTRICITY METERS SERIES AD11A, AD11B, AD11S, AD13A, AD13B, AD13S, NP71, NP73, REMOTE DISPLAYS FOR CIU8 METER. PRODUCED BY THE COMPANY MATRICA . | 7.8 | 4670.02 | China | Tchev | MATRITSA LLC |
1/31/2022 | 8541290000 | MOSFET TRANSISTORS: N-CHANNEL - IPN70R600P7SATMA1 SERIES COOLMOS P7 WITH A TOTAL DISPOSION POWER 6.9 W AND DRAIN-SOURCE BREAKDOWN VOLTAGE 700V. TYPE OF SEMICONDUCTOR - SILICON. | 5.78 | 4304.48 | China | ST PETERSBURG RUSSIA | ALR LLC |
1/31/2022 | 8541290000 | POWERFUL MOSFET TRANSISTORS: P-CHANNEL SERIES HEXFET MODEL IRLML5203TRPBF , WITH MAXIMUM DISPOSION POWER 1.25 W, DRAIN-SOURCE BREAKDOWN VOLTAGE 30V, CONTINUOUS DRAIN CURRENT 3A. TYPE OF SEMICONDUCTOR - SILICON. | 1.08 | 964.28 | Philippines | ST PETERSBURG RUSSIA | ALR LLC |
1/18/2022 | 8541290000 | STD20NF20 FIELD TRANSISTOR IS USED IN STREET VXX SERIES DRIVERS. IT IS USED FOR CONVERSION (SWITCHING) OF ELECTRIC ENERGY IN POWER UNITS. TECHNICAL DATA: CONFIGURATION AND POLARITY - N CHANNEL MAXIMUM VOLTAGE | 6.2 | 4572.2 | China | KAZAN | LEDEL LLC |
1/21/2022 | 8541290000 | N-CHANNEL MOSFET TRANSISTORS: SUPER MESH STN1HNK60 SERIES WITH DISPOSION POWER 3.3 W, DRAIN-SOURCE VOLTAGE 600V; IPD50R3K0CEAUMA1 COOLMOS CE SERIES WITH A TOTAL DISPOSION POWER OF 26 W AND DRAIN-SOURCE BREAKDOWN VOLTAGE OF 550V; TK15A20D,S4X(S MO | 202.21 | 27842.7 | China | ST PETERSBURG RUSSIA | ALR LLC |
1/26/2022 | 8541290000 | N-CHANNEL MOSFET TRANSISTORS: SUPER MESH STN1HNK60 SERIES WITH DISPOSION POWER 3.3 W, DRAIN-SOURCE VOLTAGE 600V; TK15A20D,S4X(S WITH DISPOSION POWER 35W, DRAIN-SOURCE VOLTAGE 200V. SEMICONDUCTOR TYPE - SILICON. | 183.53 | 28387.3 | China | ST PETERSBURG RUSSIA | ALR LLC |