1/31/2022 | 8541490000 | OPTICAL ENCODER IS A DISPLACEMENT SENSOR BASED ON A LED AND IR RECEIVING ELEMENT, BETWEEN WHICH A DISC ROTATS, SEPARATED INTO TRANSPARENT AND opaque ZONES, OPTICAL ENCODERS ARE USED TO DETERMINE SUCH | 4 | 6462.3 | Malaysia | NOVOSIBIRSK AIRPORT TOLMACHEVO | MATRIX ELECTRONICS LLC |
1/26/2022 | 8541490000 | INFRARED EDGE SENSOR. REPRESENTS AN OPTOCAIR ASSEMBLED IN A SINGLE CASE (VISIBLE LED AND PHOTODIOD, SEPARATED BY SPACE). DESIGNED FOR TRACKING THE FOLDING OF THE LEAF. SPARE PART FOR DRYER-SHI | 1.2 | 2501.39 | Germany | LEONBERG GERMANY | DONETSKAYA MANUFAKTURA M JSC |
1/24/2022 | 8541290000 | TRANSISTOR IPD60R3K3C6ATMA1. N-CHANNEL MOSFET. THE MOS STRUCTURE CONSISTS OF A METAL AND A SEMICONDUCTOR SEPARATED BY A LAYER OF SILICON DIOXIDE (SIO2). IN THE GENERAL CASE, THE STRUCTURE IS CALLED MIS (METAL - DIELECTRIC - SEMICONDUCTOR). REPRESENTS | 1.39 | 416.1 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/21/2022 | 8541290000 | TRANSISTORS WITH A DISPERSION POWER OF 1.8 W ARE NOT INTENDED FOR DISPOSAL AS SEPARATE PRODUCTS, ARE INTENDED FOR USE AS PART OF ELECTRONICS FOR THE PRODUCTION OF THE ROSEMOUNT 3144?, ROSEMOUNT 8800 TEMPERATURE SENSOR AND PRESSURE CALIBRATOR | 0.04 | 29.9 | China | THIEF RIVER FALLS USA | PG METRAN JSC |
1/19/2022 | 8541410004 | INORGANIC Light-Emitting Diodes (LED) ON ALUMINUM SUBSTRATE, INTENDED FOR MANUFACTURING LIGHTS, DIODES ARE PLACED IN PLASTIC TRAYS, EACH DIODE IS SEPARATELY IN ITS CELL; NOT CRAFT, NOT CAPABLE OF CREATING ELECTROMAGNETIC INTERFERENCE, INFORMATION ABOUT | 13.5 | 17911.4 | Hong Kong | HONG KONG | LYUMENMAKS LLC |
1/6/2022 | 8541600000 | ASSEMBLED PIEZOELECTRIC CRYSTALS (RESONATORS), NOT INTENDED FOR DISPOSAL AS SEPARATE GOODS, ARE INTENDED EXCLUSIVELY FOR THE DECLARANTÆS OWN USE, NOT INTENDED FOR DISPOSAL AS INDIVIDUAL GOODS | 0 | 63.94 | Taiwan | THIEF RIVER FALLS USA | PG METRAN JSC |
1/26/2022 | 8541290000 | TRANSISTOR STD2HNK60Z N-CHANNEL MOSFET. THE MOS STRUCTURE CONSISTS OF A METAL AND A SEMICONDUCTOR SEPARATED BY A LAYER OF SILICON DIOXIDE (SIO2). IN THE GENERAL CASE, THE STRUCTURE IS CALLED MIS (METAL - DIELECTRIC - SEMICONDUCTOR). REPRESENTS | 67.01 | 19112.5 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/18/2022 | 8541290000 | TRANSISTOR FQD2N100TM. N-CHANNEL MOSFET. THE MOS STRUCTURE CONSISTS OF A METAL AND A SEMICONDUCTOR SEPARATED BY A LAYER OF SILICON DIOXIDE (SIO2). IN THE GENERAL CASE, THE STRUCTURE IS CALLED MIS (METAL - DIELECTRIC - SEMICONDUCTOR). REPRESENTS | 1.31 | 641.75 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/18/2022 | 8541290000 | IRFR9024NTRPBF TRANSISTOR. P-CHANNEL MOSFET. THE MOS STRUCTURE CONSISTS OF A METAL AND A SEMICONDUCTOR SEPARATED BY A LAYER OF SILICON DIOXIDE (SIO2). IN THE GENERAL CASE, THE STRUCTURE IS CALLED MIS (METAL - DIELECTRIC - SEMICONDUCTOR). REPRESENTS | 1.25 | 360.4 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/13/2022 | 8541100009 | SEMICONDUCTOR DIODE, TRANSIENT SURGE SUPPRESSION, SEPARATE CRYSTAL IN CASE, NO WASTE, NO SCRAP | 1.58 | 387.64 | Malaysia | VANTAA AIRPORT | GAMMA LIMITED LLC |