1/31/2022 | 8541100009 | DIODES ARE A SEMICONDUCTOR DEVICE (NOT PHOTO-SENSITIVE, NOT LIGHT EMITTING) INTENDED TO NEUTRALIZE INTERFERENCE IN POWER LINES. | 3.1 | 1438.02 | China | SHENZHEN CHINA | NPO GALILEOSKAY LLC |
1/29/2022 | 8541100009 | PROTECTIVE DIODE INTENDED FOR USE IN ELECTRONICS FOR PROTECTION OF SENSITIVE EQUIPMENT FROM ELECTROSTATIC DISCHARGE. GENERAL CIVIL APPLICATION. NOT APPLICABLE IN FIRE AUTOMATIC EQUIPMENT. NOT FOR MILITARY PURPOSES. | 0.02 | 31.87 | China | NOVOSIBIRSK AIRPORT TOLMACHEVO | MICROSAN LLC |
1/14/2022 | 8541100009 | PROTECTIVE DIODE INTENDED FOR USE IN ELECTRONICS TO PROTECT SENSITIVE EQUIPMENT FROM ESD | 17 | 804.25 | China | URUMCHI CHINA | MATRIX ELECTRONICS LLC |
1/10/2022 | 8541100009 | SCHOTTKY DIODE BAT54C,235. DIODE ASSEMBLY FROM TWO SCHOTTKY DIODES IN ONE CASE. IT IS TWO P-N JUNCTIONS WITH A COMMON CATHODE, INCLUDED IN A RECTANGULAR PLASTIC CASE, IS NOT PHOTO-SENSITIVE. THERE ARE 3 | 0.56 | 82.4 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/28/2022 | 8541100009 | PROTECTIVE DIODE INTENDED FOR USE IN ELECTRONICS FOR PROTECTION OF SENSITIVE EQUIPMENT FROM ELECTROSTATIC DISCHARGE. GENERAL CIVIL APPLICATION. NOT FOR MILITARY PURPOSES. NOT APPLICABLE IN FIRE AUTOMATIC EQUIPMENT. DOES NOT FUNCTION | 0 | 46.82 | Taiwan | NOVOSIBIRSK AIRPORT TOLMACHEVO | MICROSAN LLC |
1/30/2022 | 8541100009 | 1.5KE30A / DIODE DESIGNED TO PROTECT SENSITIVE ELECTRONIC EQUIPMENT AGAINST VOLTAGE TRANSITIONS CAUSED BY LIGHTNING AND OTHER VOLTAGE TRANSITION EVENTS, OPERATING VOLTAGE, NOT CRAFT, NON MILITARY PURPOSE -30V = 500PCS | 0.65 | 45.67 | China | SHENZHEN CHINA | NPO CARDDEX LLC |
1/31/2022 | 8541100009 | SEMICONDUCTOR SILICON DIODES NON-PHOTO AND NON-LIGHT EMITTING .TVS DIODES - AC VOLTAGE SUPPRESSION DIODES (SILICON AVALANCHE DEVICES). DESIGNED TO PROTECT SENSITIVE ELECTRONIC EQUIPMENT FROM VOLTAGE TRANSITIONS | 2.84 | 628.23 | China | SCHIPHOL RIJK NETHERLANDS | STRELOY ON ORDER OF LLC INVENTRONIKA LLC |
1/13/2022 | 8541100009 | SEMICONDUCTOR DEVICES (FOR DIODES, TRANSISTORS, CONVERTERS BASED ON SEMICONDUCTORS); PHOTO-SENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLVANIC CELLS, ASSEMBLED OR NOT ASSEMBLED IN MODULES, OR NOT MOUNTED | 0 | 6.38 | China | MOSCOW RUSSIA | RIF GROUP LLC |
1/29/2022 | 8541100009 | PROTECTIVE DIODE INTENDED FOR USE IN ELECTRONICS FOR PROTECTION OF SENSITIVE EQUIPMENT FROM ELECTROSTATIC DISCHARGE. GENERAL CIVIL APPLICATION. NOT APPLICABLE IN FIRE AUTOMATIC EQUIPMENT. NOT FOR MILITARY PURPOSES. | 0.01 | 29.32 | Malaysia | NOVOSIBIRSK AIRPORT TOLMACHEVO | MICROSAN LLC |
1/20/2022 | 8541100009 | DIODE SMAJ30A-TR. IS A PN JUNCTION MADE ON A SILICON PLATE. THE DIODE IS PACKED IN A PLASTIC CASE, FROM THE ENDS OF WHICH THERE ARE CONCLUSIONS FOR INSTALLATION ON THE BOARD. IS NOT PHOTO-SENSITIVE. APPLIED ON THE SIDE OF THE CATHODE | 0.98 | 238.7 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |