1/31/2022 | 8541410009 | SEMICONDUCTOR ELEMENTS-DIODES LIGHT-EMISSIONING (NOT SO. PRECIOUS METALS), ARE NOT LIGHTING EQUIPMENT, DO NOT HAVE POWER SUPPLIES, ARE NOT USED IN PREMISES, FOR MOUNTING ON PRINTED BOARDS: | 0.02 | 74.3 | China | MOSCOW RUSSIA | ALMAZ SP JSC |
1/26/2022 | 8541410009 | SEMICONDUCTOR ELEMENTS-DIODES LIGHT EMITTING FOR MOUNTING ON PRINTED BOARDS: | 0.1 | 115.4 | Japan | MOSCOW RUSSIA | SMART VIP LLC |
1/22/2022 | 8541410009 | PHOTO-SENSITIVE SEMICONDUCTOR DEVICES: OPTOCOUPLE, SEMICONDUCTOR, CONSISTING OF A LIGHT EMMITTER AND A PHOTO-RECEIVER, COMBINED BY AN OPTICAL CHANNEL, A TYPE OF SEMICONDUCTOR - GALLIUM ARSENIIDE EMITTING DIODE AND A SILICON PHOTOTRANSISTOR IS USED, AND | 0 | 3.12 | Taiwan | SHENZHEN CHINA | STOUT LLC |
1/12/2022 | 8541410009 | INFRARED LASER DIODE FOR MEDICAL, SCIENTIFIC AND INDUSTRIAL APPLICATIONS IS A SEMICONDUCTOR DEVICE THAT CONVERTS ELECTRIC ENERGY INTO COHERENT OPTICAL ENERGY (RADIATION) | 0.24 | 7502.36 | United States of America | PEABODY | LASER TECHNIKA LLC |
1/11/2022 | 8541410009 | INFRARED LASER DIODE FOR MEDICAL, SCIENTIFIC AND INDUSTRIAL APPLICATIONS IS A SEMICONDUCTOR DEVICE THAT CONVERTS ELECTRIC ENERGY INTO COHERENT OPTICAL ENERGY (RADIATION) | 0.13 | 5153.5 | United States of America | PEABODY | LASER TECHNIKA LLC |
1/27/2022 | 8541410009 | CHIP RB-780B-190-10-4-SE IS A LASER DIODE (SEMICONDUCTOR). STRUCTURE: STRAINED STRUCTURE GROWN BY THE METHOD OF MULTI-QUANTUM WELLS AND STAGED GROWTH BY CHEMICAL VAPOR DEPOSITION GAAS (gallium arsenide) | 0.01 | 1971.27 | China | SHENZHEN CHINA | NPP INZHECT LLC |
1/26/2022 | 8541410009 | LASER SEMICONDUCTOR DIODE MODULES. DESIGNED FOR TARGET DESIGNATION ON CIVIL PURPOSES CNC MACHINES OR IN AUTOMATION SYSTEMS. THE LASER MODULE IS A LASER P/P DIODE IN A METAL CASE WITH 2 CONTACT WIRES | 5.27 | 2818.37 | China | NINGBO CHINA | STANKOPROMSERVICE LLC |
1/21/2022 | 8541410009 | LASER DIODE - DFB LASER. SEMICONDUCTOR LASER EMITTER WITH FIBER OUTPUT OF RADIATION IN 14-PIN BUTTERFLY TYPE CASE. | 0.42 | 2333.8 | China | ST PETERSBURG RUSSIA | SPECIAL SYSTEMS PHOTONICS LLC |
1/29/2022 | 8541410009 | INFRARED LASER DIODE FOR MEDICAL, SCIENTIFIC AND INDUSTRIAL APPLICATIONS IS A SEMICONDUCTOR DEVICE THAT CONVERTS ELECTRIC ENERGY INTO COHERENT OPTICAL ENERGY (RADIATION) | 0.27 | 7560.83 | United States of America | PEABODY | LASER TECHNIKA LLC |
1/19/2022 | 8541410009 | LASER DIODES, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED AS PART OF EQUIPMENT AND ARE NOT INTENDED FOR INDEPENDENT USE: FIBER-OPTIC LASER DIODES WITH FIBER OUTPUT 2 M LONG, SEMICONDUCTOR, SEMICONDUCTOR TYPE GAAS (ARSENI | 1 | 700.74 | China | BEIJING CHINA | LLS JSC |