1/11/2022 | 8541410008 | PHOTO-SENSITIVE SEMICONDUCTOR DEVICES, ILLUMINATION SENSOR (PHOTO-GALVANIC CELL), RECORDING BRIGHTNESS INDICATORS FROM THE ENVIRONMENT, INTENDED FOR USE IN THE PRODUCTION OF CIVIL ELECTRONICS, NOT SCRAP OF ELECTRICAL EQUIPMENT | 0.23 | 125.86 | China | SHENZHEN CHINA | SITIRON LLC |
1/27/2022 | 8541410008 | SEMICONDUCTOR DIODES, LIGHT EMITTING: SEE ADDITION | 1.95 | 389.96 | China | SHENZHEN CHINA | BRAIN DEVELOPMENT LLC |
1/25/2022 | 8541410008 | SEMICONDUCTOR DIODE, LIGHT EMITTING, FOR APPLICATION IN NON-HOUSEHOLD ELECTRICAL PRODUCTS | 6.51 | 2298.35 | China | ALFELD GERMANY | EHTIINDASTRI LLC |
1/26/2022 | 8541410008 | LIGHT EMITTING DIODES OF THE INFRARED RADIATION SPECTRUM, FOR SURFACE MOUNTING ON PRINTED BOARDS, SEMICONDUCTOR TYPE - ALGALNP, ARE INTENDED FOR USE IN RADIO ELECTRONIC EQUIPMENT. | 39.52 | 5834.8 | China | SAINT PETERBURG RUSSIA | KM ELECTRONICS LLC |
1/27/2022 | 8541410008 | LED CL-5BF9UT-ZB/6(51H3/A6) IS A LIGHT EMITTING SEMICONDUCTOR DIODE. STRUCTURALLY CONSISTS OF TWO LEDS COMBINED IN ONE TRANSPARENT CASE - INFRARED AND BLUE SPECTRUM, WITH A COMMON ANODE. OPERATING PRINCIPLE - RADIATION | 0.15 | 81.9 | China | KAZAN | STC TECHNOLOGIES XXI LLC |
1/19/2022 | 8541410008 | SEMICONDUCTOR DIODE, LIGHT EMITTING, FOR APPLICATION IN NON-HOUSEHOLD ELECTRICAL PRODUCTS | 1.6 | 216.03 | China | ALFELD GERMANY | EHTIINDASTRI LLC |
1/17/2022 | 8541410008 | INORGANIC LIGHT EMITTING DIODE ULTRAVIOLET, SEMICONDUCTOR DEVICE WITH ELECTRONIC HOLE R-P JUNCTION OR METAL-SEMICONDUCTOR CONTACT | 0.2 | 380.45 | China | SHENZHEN CHINA | OOO TD NEON EK |
1/13/2022 | 8541410008 | LEDS - A SEMICONDUCTOR DEVICE WITH AN ELECTRONIC-HOLE JUNCTION OR METAL-SEMILCONDUCTOR CONTACT, CREATING OPTICAL RADIATION WHEN ELECTRIC CURRENT IS PASSED THROUGH IT, USED IN GENERAL-PURPOSE ELECTRONIC DEVICES | 0.47 | 705.1 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |