1/11/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS WITH A DISPERSION POWER LESS THAN 1 W, FOR MOUNTING ON PRINTED BOARDS, FOR USE IN RADIO ELECTRONIC EQUIPMENT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.01 | 6.48 | Taiwan | ST PETERSBURG RUSSIA | ELECTRONICS IMPORT EXPORT LLC |
1/28/2022 | 8541210000 | TRANSISTORS DESIGNED FOR APPLICATION IN ELECTRICAL ASSEMBLY OF GENERAL INDUSTRIAL PURPOSE, TYPE P SEMICONDUCTOR-SILICON | 0 | 4.88 | Taiwan | ST PETERSBURG RUSSIA | ELECTRONICS IMPORT EXPORT LLC |
1/21/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 0.960 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET, SEMICONDUCTOR TYPE - SILICON | 0.2 | 118.43 | Taiwan | HONG KONG | STOUT LLC |
1/1/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 0.5 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET, SEMICONDUCTOR TYPE: SI - SILICON | 0 | 10.84 | Taiwan | SHENZHEN CHINA | RONTA LLC |
1/1/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 0.5 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET, SEMICONDUCTOR TYPE: SI - SILICON | 0 | 7.24 | Taiwan | SHENZHEN CHINA | RONTA LLC |
1/30/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS WITH A DISPERSION POWER LESS THAN 1 W, FOR MOUNTING ON PRINTED BOARDS, FOR USE IN RADIO ELECTRONIC EQUIPMENT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.14 | 135.81 | Taiwan | VANTAA AIRPORT | ALKON ELECTRONICS LLC |