1/12/2022 | 3818001000 | SINGLE-CRYSTAL SILICON, ALLOYED IN PLATES, INTENDED FOR PRODUCTION OF SEMICONDUCTOR DEVICES, NOT WASTE: | 16 | 18486.1 | Germany | MOSCOW RUSSIA | CJSC KREMNIY MARKETING |
1/24/2022 | 3818001000 | DOPOED SILICON, CHEMICAL COMPOUNDS: SILICON WAfer (SUBSTRATE), HAS A ROUND SHAPE, STANDARD FOR SEMICONDUCTOR WAFS, DIAMETER 150 MM, WATER THICKNESS IS FROM 300 TO 4000 MKM, SUPPLIED FOR SCIENTIFIC RESEARCH | 6 | 8003.6 | Japan | MOSCOW RUSSIA | TECHMASHIMPORT LLC |
1/28/2022 | 3818001000 | WATER PLATES ARE SUBSTRATES FOR PHOTO-SENSITIVE SEMICONDUCTOR DEVICES FROM DOPED SILICON OF ROUND SHAPE, NOT CUT TO CRYSTALS, FOR USE IN THE MICROELECTRONIC INDUSTRY. | 2.6 | 1484.02 | Germany | AACHEN EILENDORF GERMANY | TTM LLC |
1/18/2022 | 3818009000 | SEMICONDUCTOR WATER FROM SINGLE-CRYSTAL GALLIUM ARSENIDE (GAAS) WITH SURFACE APPLIED EPITAXIAL HETEROSTRUCTURE IN THE FORM OF ULTRA-THIN LAYERS OF GALLIUM ARSENIDE AND INDIUM-GALLIUM ARSENIDE (INGAAS) WITH A TOTAL THICKNESS OF 3.6 MKM. PLATES | 0.86 | 12505.7 | China | SUZHOU | NPF MIKRAN JSC |
1/17/2022 | 3818009000 | GALLIUM ARSENIDE SEMICONDUCTOR WAFERS IN THE FORM OF DISC 4 INCH (100 MM) THICKNESS 0.63 MM, SINGLE-CRYSTAL GALLIUM ARSENIDE (GAAS) BASE WITH EPITAXIAL HETEROSTRUCTURE APPLIED ON THE SURFACE | 0.35 | 5981.65 | Taiwan | XINZHU CITY | NPF MIKRAN JSC |
1/14/2022 | 3818001000 | SILICON PLATES ALLOYED WITH PHOSPHORUS, ROUND SHAPE. APPLIED IN THE PRODUCTION OF SEMICONDUCTORS FOR THE PROCESS OF MECHANICAL CUTTING AND EPITAXIAL GROWTH OF SEMICONDUCTOR LAYERS. WILL BE USED FOR MANUFACTURING OF CRYSTALS OF MICROWAVE, | 5.42 | 4150.98 | South Korea | SEOUL | NPK PROGRESS LLC |
1/12/2022 | 3818001000 | CHEMICAL ELEMENTS ALLOYED IN THE FORM OF PLATES. INTENDED FOR USE IN ELECTRONICS IN THE MANUFACTURE OF SEMICONDUCTOR STRUCTURES. NOT WASTE. ARE NOT A SOURCE OF IONIZING RADIATION. | 2.65 | 2534.76 | United States of America | SANTA CLARA CA USA | SCIENTIFIC DEVICES AND SYSTEMS LLC |
1/27/2022 | 3818001000 | SILICON CARBIDE PLATE (CAS# 409-21-2), DIAMETER 153+0.5MM. CHEMICAL FORMULA: CSI, CONTENT 100% SILICON CARBIDE. ALLOYED WITH NITROGEN. POLISHED ON TWO SIDES. WITHOUT EPITAXIAL LAYERS. IS N-TYPE SEMICONDUCTOR MATERIAL, | 0.8 | 13814.6 | China | BEIJING CHINA | MONOCRISTALL LLC |