1/27/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 1 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: RF BIPOLAR TRANSISTOR, TYPE OF SEMICONDUCTOR: SI - SILICON | 0.03 | 11.61 | China | TIF RIVER FOLLS | STOUT LLC |
1/31/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 3 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: RF MOSFET TRANSISTOR, SEMICONDUCTOR TYPE: SI - SILICON | 0.13 | 426 | Malaysia | HAMBURG AIRPORT GERMANY | STOUT LLC |
1/26/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 0.3 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: BROAD-BAND RF TRANSISTORS, SEMICONDUCTOR TYPE: SI-SILICON | 0.11 | 63.13 | China | SHENZHEN CHINA | STOUT LLC |
1/5/2022 | 8541210000 | RF BIPOLAR TRANSISTORS, NOT SCRAP EQUIPMENT, FIELD OF APPLICATION: | 0.07 | 3.99 | China | MOSCOW REGION MYTISCHI | TESTKOMPLEKT LLC |
1/26/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISSIPATION 28.8 W, NOT SCRAP ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: RF FIELD TRANSISTORS, SEMICONDUCTOR TYPE: GAN-ON-SIC (NIT | 0.2 | 3710.87 | Malaysia | SHENZHEN CHINA | STOUT LLC |
1/17/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 1 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: RF BIPOLAR TRANSISTOR, TYPE OF SEMICONDUCTOR: SI - SILICON | 0.02 | 351.1 | China | TIF RIVER FOLLS | STOUT LLC |