1/28/2022 | 8542326900 | MONOLITHIC ELECTRONIC INTEGRATED CIRCUITS: ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (FLASH-ES PROM) WITH A MEMORY CAPACITY FROM 512 MBIT, NOT RADIATION RESISTANT, NOT SCRAP OF ELECTRICAL EQUIPMENT | 0.85 | 26779 | Taiwan | ST PETERSBURG RUSSIA | COMPONENT LOGISTIC LLC |
1/26/2022 | 8542326900 | ELECTRICALLY ERASABLE REPROGRAMMEABLE PERMANENT MEMORY (ES PROM), WITH MORE THAN 512 MB MEMORY | 1.91 | 4990.75 | Malaysia | HONG KONG | PR ELECTRONICS LLC |
1/26/2022 | 8542326900 | MONOLITHIC ELECTRONIC INTEGRATED CIRCUITS: ELECTRICALLY ERASURE REPROGRAMMABLE PERMANENT MEMORY (FLASH-ES PROM) OF GENERAL APPLICATION (NOT RADIATION RESISTANT, WITH MEMORY FROM 512 MBIT, NOT ELECTRICAL EQUIPMENT SCRAP), DO NOT HAVE | 0.26 | 267.13 | Malaysia | HONG KONG | ONSHOR WIND LLC |
1/27/2022 | 8542326900 | ELECTRICALLY ERASEABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 3.6 V OPERATING TEMPERATURE FROM -40 TO +85 2 GB | 0.1 | 1973.49 | Taiwan | HONGKONG AIRPORT | ALTRABETA LLC |
1/26/2022 | 8542326900 | ELECTRICALLY ERASEABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 1.9 V OPERATING TEMPERATURE FROM - 40 TO + 95 2 GB | 0.06 | 166.63 | Taiwan | HONGKONG AIRPORT | ALTRABETA LLC |
1/26/2022 | 8542326900 | ELECTRICALLY ERASEABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 2 V OPERATING TEMPERATURE FROM - 40 TO + 85 1 GB | 0 | 61.87 | Taiwan | HONGKONG AIRPORT | ALTRABETA LLC |
1/27/2022 | 8542326900 | ELECTRICALLY ERASEABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 5.5 V OPERATING TEMPERATURE FROM -40 TO +85 32 GB | 0.81 | 2096.43 | United States of America | HONGKONG AIRPORT | ALTRABETA LLC |
1/27/2022 | 8542326900 | ELECTRICALLY ERASEABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 1.9 V OPERATING TEMPERATURE FROM - 55 TO + 100 1 GB | 0.4 | 644.23 | United States of America | HONGKONG AIRPORT | ALTRABETA LLC |
1/26/2022 | 8542326900 | ELECTRICALLY ERASABLE REPROGRAMMEABLE PERMANENT MEMORY (ES PROM), WITH MORE THAN 512 MB MEMORY | 0.46 | 1675.66 | China | HONG KONG | PR ELECTRONICS LLC |
1/17/2022 | 8542326900 | ELECTRONICALLY ERASABLE PROGRAMMEABLE PERMANENT MEMORY DEVICE WITH A MEMORY CAPACITY OF MORE THAN 512 MBIT, COMPONENTS FOR REPAIR AND MAINTENANCE OF ELECTRONIC EQUIPMENT AND DEVICES. | 0.34 | 464.9 | Taiwan | MOSCOW RUSSIA | RADIOFID SYSTEMS LLC |