1/19/2022 | 8542326100 | MICROCIRCUITS - MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT STORAGE DEVICES MRAM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF 1 Mbit FOR USE IN PERSONAL COMPUTERS. | 1.11 | 9743.1 | China | MOSCOW RUSSIA | SIBELKOM LOGISTIC LLC |
1/24/2022 | 8542326100 | ELECTRONIC INTEGRATED CIRCUITS, REPRESENTING MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT - FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF NO MORE THAN 512MBIT, FOR USE IN HOUSEHOLD | 1.47 | 696 | China | EKATERENBURG | VEST OST LLC |
1/22/2022 | 8542326100 | ELECTRICALLY ERASABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 3.6 V OPERATING TEMPERATURE FROM - 40 TO + 85 128 MB | 0.33 | 823.66 | China | MONTREAL CANADA | ALTRABETA LLC |
1/11/2022 | 8542326100 | ELECTRONIC INTEGRATED ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY DEVICES (FLASH-ES PROM) WITH A MEMORY CAPACITY NOT MORE THAN 512 Mbit. DO NOT CONTAIN ENCRYPTION (CRYPTOGRAPHIC) DEVICES. DESIGNED FOR MOUNTING ON THE PRINT | 0.31 | 320.2 | China | EKATERENBURG | VEST OST LLC |
1/26/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT MEMORY IN THE FORM OF INTEGRAL MICROCIRCUIT VOLTAGE 5.5 V OPERATING TEMPERATURE FROM - 40 TO + 85 1 MB | 0 | 9.64 | China | MONTREAL CANADA | ALTRABETA LLC |
1/26/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT MEMORY IN THE FORM OF INTEGRAL MICROCIRCUIT VOLTAGE 3.6 V OPERATING TEMPERATURE FROM - 40 TO + 85 1 MB | 0.02 | 169.85 | China | HONGKONG AIRPORT | ALTRABETA LLC |
1/26/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 5.5 V OPERATING TEMPERATURE FROM - 40 TO + 85 512 MB | 1.41 | 2197.42 | China | HONGKONG AIRPORT | ALTRABETA LLC |
1/12/2022 | 8542326100 | ELECTRONIC INTEGRATED CIRCUITS, REPRESENTING MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT - FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF NO MORE THAN 512MBIT, FOR USE IN HOUSEHOLD | 0.15 | 685.2 | China | HONG KONG | VEST OST LLC |
1/10/2022 | 8542326100 | MICROCIRCUITS - MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT STORAGE DEVICES FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF 16 MBIT FOR USE IN PERSONAL COMPUTERS. | 0.07 | 612.35 | China | HONG KONG | SIBELKOM LOGISTIC LLC |
1/24/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 3.6 V OPERATING TEMPERATURE - 40 TO + 85 64 KB | 0.06 | 109.28 | China | ST PETERSBURG RUSSIA | ALTRABETA LLC |