1/28/2022 | 8542327500 | ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (ES PROM): | 0 | 4.62 | Thailand | MOSCOW RUSSIA | BALTELECTRON LLC |
1/28/2022 | 8542327500 | ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (ES PROM): | 0 | 5.46 | Thailand | MOSCOW RUSSIA | BALTELECTRON LLC |
1/9/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.06 | 1724.79 | Thailand | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/9/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.03 | 286.97 | Thailand | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/21/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.08 | 1021.3 | Thailand | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/24/2022 | 8542327500 | ELECTRONIC INTEGRAL CIRCUITS, ELECTRICALLY ERASEABLE, REPROGRAMMABLE PERMANENT MEMORY DEVICES (EPROM), FOR INSTALLATION IN ELECTRONIC CIRCUITS | 1.45 | 948.45 | Thailand | KOTKA | MT SYSTEMS LLC |
1/18/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT MEMORY IN THE FORM OF INTEGRAL MICROCIRCUIT VOLTAGE 5.5 V OPERATING TEMPERATURE FROM - 40 TO + 85 64 KB | 0 | 5.12 | Thailand | MONTREAL CANADA | ALTRABETA LLC |
1/11/2022 | 8542327500 | ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (ES PROM): | 0 | 21.12 | Thailand | NORT MAYAMI BEACH | BALTELECTRON LLC |
1/21/2022 | 8542326100 | ELECTRICALLY ERASABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 3.6 V OPERATING TEMPERATURE FROM - 40 TO + 85 128 MB | 0.01 | 39.47 | Thailand | SHENZHEN CHINA | ALTRABETA LLC |
1/21/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT MEMORY IN THE FORM OF INTEGRAL MICROCIRCUIT VOLTAGE 3.6 V OPERATING TEMPERATURE FROM - 40 TO + 85 32 MB | 0.1 | 67.91 | Thailand | SHENZHEN CHINA | ALTRABETA LLC |