1/29/2022 | 8542326100 | Flash Es PPZ with memory capacity no more than 512 mibite: electrically erasable rewritable constant flash device in the form of an integral chip, memory capacity 0.064Mbits, voltage 2.7-3.5B art: MB85RS64PNF-G-JNERE1 - 3000 pcs | 1.5 | 1522.1 | Japan | MOSCOW RUSSIA | DIDZHIKOM LLC |
1/11/2022 | 8542326100 | INTEGRATED MONOLITHIC IN-SYSTEM PROGRAMMABLE CONFIGURATION MEMORY INTENDED FOR USE IN TELECOMMUNICATION EQUIPMENT, NOT MILITARY. PURPOSE, NOT SCRAP OF ELECTRICAL EQUIPMENT ART: S29GL01GS11TFIV20 - 25 PCS | 0.01 | 594.69 | Malaysia | MOSCOW RUSSIA | SCAN ENGINEERING PROF LLC |
1/26/2022 | 8542326100 | INTEGRATED MONOLITHIC IN-SYSTEM PROGRAMMABLE CONFIGURATION MEMORY INTENDED FOR USE IN TELECOMMUNICATION EQUIPMENT, NOT MILITARY. PURPOSE, NOT SCRAP OF ELECTRICAL EQUIPMENT ART: S29GL01GS11TFIV20 - 67 PCS | 0.03 | 1592.25 | Malaysia | MOSCOW RUSSIA | SCAN ENGINEERING PROF LLC |
1/26/2022 | 8542326100 | INTEGRATED MONOLITHIC FLASH MEMORY CHIP IS DESIGNED FOR SURFACE MOUNTING ON A PRINTED BOARD IN TELECOMMUNICATIONS EQUIPMENT, NOT A SCRAP OF ELECTRICAL EQUIPMENT, NON-MILITARY PURPOSE ART: S25FL127SABMFI101 - 6250 PCS | 1.7 | 29370.2 | Malaysia | MOSCOW RUSSIA | SCAN ENGINEERING PROF LLC |
1/16/2022 | 8542326100 | Flash Es PPZ with memory no more than 512 mibite: electrically erasable reprogrammed constant storage flash device, as an integral chip, memory capacity of 0.016 Mbps, voltage 2.5-5.5V Art: M24C16-RMN6TP - 2000 pcs | 1.4 | 1120.8 | China | MOSCOW RUSSIA | DIDZHIKOM LLC |
1/16/2022 | 8542326100 | Flash Es PPZ with memory no more than 512 mibit: electrically erasable rewritable constant storage device in the form of an integral chip, memory capacity 1Mbit, supply voltage 1.8-3.6V art: MB85RS1MTPNF-G-JNERE1 - 30000 pcs | 30 | 47252.8 | Japan | MOSCOW RUSSIA | DIDZHIKOM LLC |