1/17/2022 | 8541490000 | SEMICONDUCTOR PHOTO-SENSITIVE DEVICES FOR REPAIR AND MAINTENANCE OF PREVIOUSLY IMPORTED EQUIPMENT OF CANON BRAND, NOT SCRAP OF ELECTRICAL EQUIPMENT USED. AS COMPONENTS AND NOT INTENDED FOR INDEPENDENT USE: | 0.1 | 77.16 | China | MOSCOW RUSSIA | CANON RU LLC |
1/26/2022 | 8541490000 | PHOTO-SENSITIVE SEMICONDUCTOR DEVICES: PHOTORESISTORS USED IN LIGHT SENSORS. THESE PARTS ARE INTENDED FOR THE MANUFACTURE OF ELECTRIC APPLIANCES. NOT USED ON RAILWAY TRANSPORT, NOT MILITARY PURPOSE, ARE NOT SCRAP E | 9.7 | 2142.2 | China | MOSCOW RUSSIA | PTK ARGOS ELECTRON LLC |
1/17/2022 | 8541490000 | SEMICONDUCTOR PHOTO-SENSITIVE DEVICES FOR REPAIR AND MAINTENANCE OF PREVIOUSLY IMPORTED EQUIPMENT OF CANON BRAND, NOT SCRAP OF ELECTRICAL EQUIPMENT USED. AS COMPONENTS AND NOT INTENDED FOR INDEPENDENT USE: | 0.45 | 1380.79 | Japan | MOSCOW RUSSIA | CANON RU LLC |
1/10/2022 | 8541490000 | SEMICONDUCTOR PHOTO-SENSITIVE ELEMENT - OPTOISULATOR VOLTAGE 20 V DOES NOT CONTAIN ENCRYPTION AND CRYPTOGRAPHY FUNCTIONS, IS NOT USED FOR MILITARY PURPOSES, HAS A GENERAL INDUSTRIAL PURPOSE. | 0.1 | 584.51 | Thailand | ST PETERSBURG RUSSIA | ALTRABETA LLC |
1/27/2022 | 8541490000 | SEMICONDUCTOR PHOTO-SENSITIVE ELEMENT - PHOTODIODE VOLTAGE 30 V DOES NOT CONTAIN ENCRYPTION AND CRYPTOGRAPHY FUNCTIONS, IS NOT USED FOR MILITARY PURPOSES, HAS A GENERAL PRODUCTION PURPOSE. | 0.03 | 39.33 | Taiwan | ST PETERSBURG RUSSIA | ALTRABETA LLC |
1/26/2022 | 8541490000 | PHOTO-SENSITIVE SEMICONDUCTOR DEVICES, NOT A SCRAP OF ELECTRICAL EQUIPMENT: A PHOTOGALVANIC RELAY, IS A SINGLE-POLE NORMALLY OPEN SOLID-STATE RELAY, A BUILT-IN MOSFET TRANSISTOR, UP IS USED AS OUTPUT SWITCH | 0.01 | 11.62 | Philippines | SHENZHEN CHINA | RONTA LLC |
1/26/2022 | 8541490000 | PHOTO-SENSITIVE SEMICONDUCTOR DEVICES, NOT A SCRAP OF ELECTRICAL EQUIPMENT: A PHOTOGALVANIC RELAY, IS A SINGLE-POLE NORMALLY OPEN SOLID-STATE RELAY, A BUILT-IN MOSFET TRANSISTOR, UP IS USED AS OUTPUT SWITCH | 0.17 | 912.71 | Philippines | SHENZHEN CHINA | RONTA LLC |
1/20/2022 | 8541490000 | PHOTO-SENSITIVE SEMICONDUCTOR DEVICES, NOT SCRAP OF ELECTRICAL EQUIPMENT: PHOTODIODE, SEMICONDUCTOR, TYPE OF SEMICONDUCTOR - INDIUM GALLIUM ARSENIDE/INDIUM PHOSPHIDE, WORKING WAVE RANGE 1100 - 1600 NM, USED IN OPTICAL FIBER COMMUNICATIONS | 0.1 | 1851.1 | South Korea | INCHON AIRPORT KOREA | LLS JSC |
1/26/2022 | 8541490000 | PHOTODIODE, OPTOELECTRONIC SEMICONDUCTOR COMPONENT DESIGNED TO CONVERT LIGHT FLUX INTO ELECTRIC CURRENT, USED IN DATA PROCESSING SYSTEMS. GENERAL CIVIL APPLICATION. NOT FOR MILITARY PURPOSES. NOT APPLICABLE IN PRODUCTS | 0.88 | 9310.15 | United States of America | PENNINGTON | MICROSAN LLC |
1/31/2022 | 8541490000 | SEMICONDUCTOR LIGHT-SENSITIVE DEVICES, PHOTOELECTRIC SENSORS, VOLTAGE 24 V, USED IN THE MACHINE-BUILDING INDUSTRY TO DETECT OBJECTS IN PRODUCTION, TYPE OF SEMICONDUCTOR - TRANSISTORY, NOT SCRAP OF ELECTRICAL EQUIPMENT | 8.7 | 9026.39 | Germany | OWEN TEK | ALL IMPEX 2001 LLC |