1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. VOLTAGE DRAIN-SOURCE 1000V. SCATTERING POWER 100W. CURRENT 24A. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 16.67 | United States of America | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541290000 | FIELD TRANSISTOR OPERATING VOLTAGE 28 V 12.5 W DOES NOT CONTAIN ENCRYPTION AND CRYPTOGRAPHY FUNCTIONS, IS NOT USED FOR MILITARY PURPOSES, HAS A GENERAL PRODUCTION PURPOSE. | 0.03 | 910.31 | United States of America | ST PETERSBURG RUSSIA | COMPONENT LLC |
1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. POWER DISPOSION 69 W. VOLTAGE DRAIN-SOURCE 100 V. CURRENT 30A. SIZE 5.35 X 6.25 X 1.1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0 | 8.43 | Malaysia | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541290000 | TRANSISTORS, FOR PCB MOUNTING: MOSFET TRANSITOR, NOT SCRAP, NOT HAZARDOUS WASTE, FOR SURFACE MOUNTING USED AS ACCESSORIES FOR RADIO ELECTRONIC EQUIPMENT THE GOODS IS A GENERAL GOODS | 0.04 | 51.38 | Japan | HONG KONG | INNOVATIONS AND TECHNOLOGIES LLC |
1/10/2022 | 8541290000 | TRANSISTOR, POWER DISSIPATION 20 WATT, USED IN PRE-OUTPUT STAGES OF DEVICES FOR POWER AMPLIFICATION. GENERAL CIVIL APPLICATION. NOT FOR MILITARY PURPOSES. NOT APPLIED IN FIRE AUTOMATIC EQUIPMENT, DO NOT HAVE ENCRYPTION FUNCTION | 0.42 | 5925.21 | South Korea | HWASON NEW GAMPSHIRE | MICROSAN LLC |
1/10/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 125 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET, SEMICONDUCTOR TYPE: SI - SILICON | 0.02 | 744.4 | Mexico | TIF RIVER FOLLS | STOUT LLC |
1/10/2022 | 8541290000 | TRANSISTOR, POWER DISSIPATION MORE THAN 1 WATT, USED IN PRE-OUTPUT STAGES OF POWER AMPLIFICATION DEVICES. GENERAL CIVIL APPLICATION. NOT FOR MILITARY PURPOSES. DO NOT APPLY IN FIRE AUTOMATIC EQUIPMENT. HAVE NO FUNCTION | 0.3 | 4068.1 | China | SHIJIAZHUAN CITY ZHENQIU city | MICROSAN LLC |
1/13/2022 | 8541290000 | BIPOLAR TRANSISTOR, NOT PHOTOTRANSISTOR, FOR VOLTAGE 600 VOLTS, POWER DISPOSION 200 WATT, IGBT BRAND, WITH INSULATED GATE, WITH SILICON SEMICONDUCTOR; USED IN THE ELECTRONIC MODULE OF THE POWERDRIVE ROTARY CONTROL SYSTEM, FOR | 0.12 | 83.36 | United States of America | Unknown | REPRESENTATIVE OFFICE OF THE COMPANY SCHLUMBERGER LOGELCO INC PANAMA MOSCOW |
1/12/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, DISPOSED POWER MORE THAN 1 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: | 0.14 | 2946.81 | Taiwan | HONG KONG | ATOMA LLC |
1/13/2022 | 8541290000 | SEMICONDUCTOR DEVICES: PNP-CHANNEL MOS-TRANSISTOR. NOMINAL VOLTAGE -100 V. CURRENT -5A. DIMENSIONS 2.3 X 6.5 X 5.5MM. POWER 1W. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 3.86 | Japan | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |