| 1/26/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 3 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET, SEMICONDUCTOR TYPE: SI - SILICON | 0.01 | 24.52 | Philippines | MANSFIELD CENTER | STOUT LLC |
| 1/31/2022 | 8541290000 | MOSFET TRANSISTOR, WHICH OPERATING PRINCIPLE IS BASED ON RESISTANCE MODULATION BY A TRANSVERSE ELECTRIC FIELD OF A SEMICONDUCTOR MATERIAL. | 0.18 | 146.08 | China | SHENZHEN CHINA | NPO GALILEOSKAY LLC |
| 1/19/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 4.2 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET, SEMICONDUCTOR TYPE-SILICON | 0.08 | 105.93 | Malaysia | SHENZHEN CHINA | STOUT LLC |
| 1/18/2022 | 8541290000 | MOSFET TRANSISTORS, EXCEPT PHOTOTRANSISTORS, ARE DESIGNED FOR APPLICATION IN RADIO-ELECTRONIC ASSEMBLY FOR GENERAL INDUSTRIAL PURPOSE. | 0.05 | 18.15 | China | SHENZHEN CHINA | DAS ELECTRO LLC |
| 1/18/2022 | 8541290000 | TRANSISTOR IPD60R3K3C6ATMA1. N-CHANNEL MOSFET. THE MOS STRUCTURE CONSISTS OF A METAL AND A SEMICONDUCTOR SEPARATED BY A LAYER OF SILICON DIOXIDE (SIO2). IN THE GENERAL CASE, THE STRUCTURE IS CALLED MIS (METAL - DIELECTRIC - SEMICONDUCTOR). REPRESENTS | 27.8 | 8253 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
| 1/23/2022 | 8541290000 | MOSFET TRANSISTORS, NOT SCRAP EQUIPMENT, FIELD OF APPLICATION: TELECOM. EQUIPMENT; POWER DISSIPATION: 139 W, VGS TH - GATE-SOURCE THRESHOLD VOLTAGE: 3.8 V, TOTAL-6 pcs.; | 0.01 | 29.09 | Malaysia | SAINT PETERBURG RUSSIA | SPHERE OF ELECTRONICS LLC |
| 1/19/2022 | 8541290000 | PARTS OF ELECTRICAL EQUIPMENT THAT ARE MOSFET TRANSISTORS DESIGNED FOR USE IN TELECOMMUNICATIONS EQUIPMENT. GENERAL APPLICATION. NEW. THE PRODUCT IS PACKED IN A SPECIAL UD | 1.8 | 16346.3 | United Kingdom | SEVENUM THE NETHERLANDS | PIT LOGISTICS LLC |
| 1/22/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 3.5 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET, SEMICONDUCTOR TYPE-SILICON | 0.02 | 147.98 | China | SHENZHEN CHINA | STOUT LLC |
| 1/22/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 2.5 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET, SEMICONDUCTOR TYPE: SI - SILICON | 0.01 | 19.24 | United States of America | SHENZHEN CHINA | STOUT LLC |
| 1/13/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. MAXIMUM DRAIN-SOURCE VOLTAGE 250 V. DRAIN CURRENT 33 A. POWER 37W. DIMENSIONS 15.9 X 4.8 X 19MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 7.77 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |