| 1/20/2022 | 8541290000 | MOSFET TRANSISTORS, EXCEPT PHOTOTRANSISTORS, ARE DESIGNED FOR APPLICATION IN RADIO-ELECTRONIC ASSEMBLY FOR GENERAL INDUSTRIAL PURPOSE. | 0.02 | 108.62 | China | QUEBEC CANADA | DAS ELECTRO LLC |
| 1/20/2022 | 8541290000 | MOSFET (FIELD TRANSISTOR) FOR SURFACE MOUNTING ON A PCB IN THE ELECTRICAL INDUSTRY | 0 | 60.37 | China | VILNIUS AIRPORT LITHUANIA | ERRAYVAL SOFTVER LLC |
| 1/13/2022 | 8541290000 | POWERFUL MOSFET TRANSISTORS: WITH NPN JUNCTION ??56-16,115 WITH A TOTAL DISPOSION POWER 1.3W AND COLLECTOR-EMMITTER VOLTAGE 80V; N-CHANNEL TK10A80W,S4X(S WITH TOTAL DISPOSION POWER 40W AND DRAIN-SOURCE BREAKDOWN VOLTAGE 800V; N-CHANNEL SU SERIES | 355.81 | 64777.7 | China | ST PETERSBURG RUSSIA | ALR LLC |
| 1/13/2022 | 8541290000 | TRANSISTORS: N-CHANNEL MOSFET SERIES STRIPFET STN4NF20L , WITH POWER. SCATTERING 3.3 W. TYPE OF SEMICONDUCTOR SILICON. | 1.07 | 568.82 | China | ST PETERSBURG RUSSIA | ALR LLC |
| 1/31/2022 | 8541290000 | MOSFET TRANSISTOR, WHICH OPERATING PRINCIPLE IS BASED ON RESISTANCE MODULATION BY A TRANSVERSE ELECTRIC FIELD OF A SEMICONDUCTOR MATERIAL. | 0.18 | 146.08 | China | SHENZHEN CHINA | NPO GALILEOSKAY LLC |
| 1/14/2022 | 8541290000 | MOSFET TRANSISTORS THAT ARE PARTS OF ELECTRICAL EQUIPMENT INTENDED FOR USE IN TELECOMMUNICATION EQUIPMENT. DO NOT BE A SCRAP OF ELECTRICAL EQUIPMENT. GENERAL APPLICATION. NEW. THE PRODUCT IS PACKED IN A SPECIAL UD | 0.04 | 69.61 | China | TIF RIVER FOLLS | GLOBAL KEY LLC |
| 1/13/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. MAXIMUM DRAIN-SOURCE VOLTAGE 250 V. DRAIN CURRENT 33 A. POWER 37W. DIMENSIONS 15.9 X 4.8 X 19MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 7.77 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
| 1/14/2022 | 8541290000 | MOSFET POWER TRANSISTORS STT6N3LLH6 , WITH 1.6 W DISPOSION POWER. TYPE OF SEMICONDUCTOR SILICON. | 0.18 | 298.27 | China | ST PETERSBURG RUSSIA | ALR LLC |
| 1/18/2022 | 8541290000 | TRANSISTOR IPD60R3K3C6ATMA1. N-CHANNEL MOSFET. THE MOS STRUCTURE CONSISTS OF A METAL AND A SEMICONDUCTOR SEPARATED BY A LAYER OF SILICON DIOXIDE (SIO2). IN THE GENERAL CASE, THE STRUCTURE IS CALLED MIS (METAL - DIELECTRIC - SEMICONDUCTOR). REPRESENTS | 27.8 | 8253 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
| 1/18/2022 | 8541290000 | THE STT6N3LLH6 TRANSISTOR.IS AN N-CHANNEL MOSFET IN A PLASTIC RECTANGULAR CASE WITH SOLDER TERMINALS. THERE IS A METAL PLATE CONNECTED TO ONE OF THE TERMINALS ON THE REVERSE SIDE. | 1.9 | 35321.2 | China | Hefey | ENERGOMERA JSC |