| 1/25/2022 | 8541210000 | BIPOLAR TRANSISTORS PBRN123YT,215 , WITH POWER. SCATTERING 0.25 W. PREN. FOR UNIVERSAL APPLICATION IN MICROELECTRONICS. TYPE OF SEMICONDUCTOR SILICON. | 18.16 | 15280.6 | China | ST PETERSBURG RUSSIA | ALR LLC |
| 1/28/2022 | 8541600000 | ASSEMBLED PIEZOELECTRIC CRYSTALS FOR APPLICATION IN MICROELECTRONICS, NON-MILITARY PURPOSE: | 0.21 | 1049.18 | Japan | MOSCOW RUSSIA | EMC EXPERT LLC |
| 1/19/2022 | 8541100009 | SEMICONDUCTOR DIODES (NOT PHOTODIODES, NOT LIGHT EMITTING DIODES), FOR APPLICATION IN MICROELECTRONICS, NON-MILITARY PURPOSE, VOLTAGE UP TO 50V: | 1.85 | 559.23 | China | MOSCOW RUSSIA | EMC EXPERT LLC |
| 1/19/2022 | 8541290000 | TRANSISTOR WITH A POWER MORE THAN 1 W, FOR APPLICATION IN MICROELECTRONICS, NON-MILITARY PURPOSE, VOLTAGE UP TO 50V: | 0.11 | 548.24 | China | MOSCOW RUSSIA | EMC EXPERT LLC |
| 1/28/2022 | 8541290000 | TRANSISTOR WITH A POWER MORE THAN 1 W, FOR APPLICATION IN MICROELECTRONICS, NON-MILITARY PURPOSE, VOLTAGE UP TO 50V: | 0.68 | 373.69 | Taiwan | MOSCOW RUSSIA | EMC EXPERT LLC |
| 1/26/2022 | 8541290000 | TRANSISTOR WITH A POWER MORE THAN 1 W, FOR APPLICATION IN MICROELECTRONICS, NON-MILITARY PURPOSE, VOLTAGE UP TO 50V: | 0.46 | 249.79 | Taiwan | MOSCOW RUSSIA | EMC EXPERT LLC |
| 1/26/2022 | 8541600000 | ASSEMBLED PIEZOELECTRIC CRYSTALS FOR APPLICATION IN MICROELECTRONICS, NON-MILITARY PURPOSE: | 5.3 | 768.04 | Japan | MOSCOW RUSSIA | EMC EXPERT LLC |
| 1/26/2022 | 8541100009 | SEMICONDUCTOR DIODES (NOT PHOTODIODES, NOT LIGHT EMITTING DIODES), FOR APPLICATION IN MICROELECTRONICS, NON-MILITARY PURPOSE, VOLTAGE UP TO 50V: | 0.03 | 255.09 | China | MOSCOW RUSSIA | EMC EXPERT LLC |
| 1/26/2022 | 8541290000 | TRANSISTOR WITH A POWER MORE THAN 1 W, FOR APPLICATION IN MICROELECTRONICS, NON-MILITARY PURPOSE, VOLTAGE UP TO 50V: | 14.64 | 25993 | China | MOSCOW RUSSIA | EMC EXPERT LLC |