| 1/13/2022 | 3818009000 | SUBSTRATES INP (INDIUM PHOSPHIDE), IN THE FORM OF DISCS, DOPED, INTENDED FOR FURTHER USE IN THE PROCESS OF GROWING (MANUFACTURING) EPITAXIAL HETEROSTRUCTURES IN A MOCVD HYDRIDE EPITAXY UNIT, FOR THE MICROELECTRONIC INDUSTRY /NOT | 1.85 | 8049.71 | China | FREMONT | STC LIS LLC |
| 1/24/2022 | 3818001000 | SINGLE-CRYSTAL WATER MATERIALS FROM DOPED SILICONE ARE SUBSTRATES FOR SUBSEQUENT SPUTTING OF DIFFERENT MATERIALS ON THEM TO PRODUCE MICROELECTRONIC DEVICES (RESISTORS, CAPACITORS, ETC.) | 0.69 | 2003.6 | China | NOVOSIBIRSK AIRPORT TOLMACHEVO | AKADEMVAK LLC |
| 1/18/2022 | 3818009000 | GAAS SUBSTRATES IN THE FORM OF DISCS, DOPED, INTENDED FOR FURTHER USE IN THE PROCESS OF GROWING (MANUFACTURING) EPITAXIAL HETEROSTRUCTURES IN A MOCVD HYDRIDE EPITAXY UNIT, FOR MICROELECTRONIC INDUSTRY / NON MILITARY | 87 | 102283 | China | BAODING CITY HEBEI PROVINCE | SIGM PLUS LLC |
| 1/28/2022 | 3818001000 | SILICON ALLOYED, PURIFIED, SINGLE-CRYSTAL, IN THE FORM OF PLATES, POLISHED, INTENDED FOR USE IN MICROELECTRONICS FOR THE MANUFACTURE OF INTEGRATED MICROCIRCUITS: | 368 | 50337.1 | Japan | TOKYO | PJSC MICRON |
| 1/28/2022 | 3818001000 | WATER PLATES ARE SUBSTRATES FOR PHOTO-SENSITIVE SEMICONDUCTOR DEVICES FROM DOPED SILICON OF ROUND SHAPE, NOT CUT TO CRYSTALS, FOR USE IN THE MICROELECTRONIC INDUSTRY. | 2.6 | 1484.02 | Germany | AACHEN EILENDORF GERMANY | TTM LLC |