| 1/18/2022 | 3824995000 | COMPOSITIONS FOR GALVANIZATION, ISP. IN PRODUCTION OF MICROELECTRONICS IN THE MANUFACTURE OF PRINTED BOARDS | 6621.5 | 36884.7 | China | OLD KUPAVNA MO | OSTEK STUDIO LLC |
| 1/18/2022 | 3818009000 | GAAS SUBSTRATES IN THE FORM OF DISCS, DOPED, INTENDED FOR FURTHER USE IN THE PROCESS OF GROWING (MANUFACTURING) EPITAXIAL HETEROSTRUCTURES IN A MOCVD HYDRIDE EPITAXY UNIT, FOR MICROELECTRONIC INDUSTRY / NON MILITARY | 87 | 102283 | China | BAODING CITY HEBEI PROVINCE | SIGM PLUS LLC |
| 1/13/2022 | 3818009000 | SUBSTRATES INP (INDIUM PHOSPHIDE), IN THE FORM OF DISCS, DOPED, INTENDED FOR FURTHER USE IN THE PROCESS OF GROWING (MANUFACTURING) EPITAXIAL HETEROSTRUCTURES IN A MOCVD HYDRIDE EPITAXY UNIT, FOR THE MICROELECTRONIC INDUSTRY /NOT | 1.85 | 8049.71 | China | FREMONT | STC LIS LLC |
| 1/24/2022 | 3818001000 | SINGLE-CRYSTAL WATER MATERIALS FROM DOPED SILICONE ARE SUBSTRATES FOR SUBSEQUENT SPUTTING OF DIFFERENT MATERIALS ON THEM TO PRODUCE MICROELECTRONIC DEVICES (RESISTORS, CAPACITORS, ETC.) | 0.69 | 2003.6 | China | NOVOSIBIRSK AIRPORT TOLMACHEVO | AKADEMVAK LLC |