1/31/2022 | 8542323100 | MONOLITHIC MICROCIRCUITS, APPLICATION FIELD GENERAL INDUSTRIAL, DYNAMIC RANDOM MEMORY 512MBIT (DOSE), ORGANIZATION 16MBITH32, FREQUENCY 167 MHz, OUTPUT PARALLEL, VOLTAGE.3.3 V, OPERATING TEMPERATURE 0-+7 | 0.2 | 542.3 | Taiwan | ST PETERSBURG RUSSIA | INTEC SERVICE LLC |
1/11/2022 | 8542323100 | ELECTRONIC INTEGRATED MICROCIRCUIT: DYNAMIC RANDOM MEMORY (DOSE, DRAM), NOT RADIATION RESISTANT, NOT ELECTRICAL EQUIPMENT SCRAP. FOR PCB MOUNTING | 4.93 | 8042.55 | Taiwan | KIRKLAND UNITED STATES | MACRO GROUP LLC |
1/27/2022 | 8542323100 | MONOLITHIC INTEGRATED MICROCIRCUITS, NOT FOR MILITARY USE, NOT ELECTRICAL EQUIPMENT SCRAP: MEMORY CIRCUITS WITH A DOSAGE OF SDRAM, FOR MOUNTING ON PRINTED BOARDS, WITHOUT THE CONTENT OF ENCRYPTION (CRYPTOGRAPHIC) MEANS. NOT RADIATION RESISTANT. | 0.8 | 1331.36 | Taiwan | KIRKLAND UNITED STATES | MT SYSTEMS LLC |
1/18/2022 | 8542323100 | INTEGRATED MICROCIRCUIT OF ENERGY DEPENDENT MEMORY - RANDOM MEMORY DEVICE. IT IS USED AS A PART OF COMPLEX ELECTRONIC DEVICES FOR TEMPORARY STORAGE OF INFORMATION. | 0.59 | 2235 | Taiwan | MOSCOW RUSSIA | START XXI CENTURY LLC |
1/17/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.01 | 90.24 | Taiwan | ST PETERSBURG RUSSIA | SPETSVOLTAZH LLC |
1/17/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.01 | 33.3 | Taiwan | VANTAA AIRPORT | KVAZAR LLC |
1/25/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.15 | 280.78 | Taiwan | HONG KONG | STRELOY ON ORDER OF LLC MFC POINT OF SUPPORT LLC |
1/13/2022 | 8542323100 | MONOLITHIC INTEGRATED MICROCIRCUITS, NOT FOR MILITARY USE, NOT ELECTRICAL EQUIPMENT SCRAP: MEMORY CIRCUITS WITH A DOSAGE OF SDRAM, FOR MOUNTING ON PRINTED BOARDS, WITHOUT THE CONTENT OF ENCRYPTION (CRYPTOGRAPHIC) MEANS. NOT RADIATION RESISTANT. | 0.6 | 648.96 | Taiwan | KIRKLAND UNITED STATES | MT SYSTEMS LLC |
1/14/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - DYNAMIC RANDOM MEMORY (DRAM) WITH 512 MB MEMORY. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.01 | 84.38 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/10/2022 | 8542323100 | ELECTRONIC INTEGRATED MICROCIRCUIT: DYNAMIC RANDOM MEMORY (DOSE, DRAM), NOT RADIATION RESISTANT, NOT ELECTRICAL EQUIPMENT SCRAP. FOR PCB MOUNTING | 1.74 | 2215.67 | Taiwan | KIRKLAND UNITED STATES | MACRO GROUP LLC |