1/11/2022 | 8542326900 | MONOLITHIC INTEGRAL CHIP WITH IN-SYSTEM PROGRAMMABLE CONFIGURATION MEMORY, INTENDED FOR USE IN TELECOMMUNICATION EQUIPMENT, FOR SURFACE MOUNTING ON A PRINTED BOARD, NOT A SCRAP OF ELECTRICAL EQUIPMENT ART: | 0 | 78 | Malaysia | MOSCOW RUSSIA | SCAN ENGINEERING PROF LLC |
1/10/2022 | 8542326900 | MEMORY CHIP MONOLITHIC INTEGRAL ELECTRICALLY ERASABLE REPROGRAMMABLE, NOT SCRAP ELECTRICAL EQUIPMENT, NAND FLASH, CAPACITY 2 GB (FLASH MEMORY CONFIGURATION: 256M X 8BIT) , VOLTAGE.2 | 3.58 | 4549.76 | Taiwan | NOVOSIBIRSK AIRPORT TOLMACHEVO | VEGA ABSOLUT LLC |
1/27/2022 | 8542326900 | INTEGRATED CHIP,MONOLITHIC,DIGITAL,MEMORY,FLASH-ES PROM,MEMORY VOLUME MORE THAN 512 MBIT, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 1.2 | 17942.9 | South Korea | INCHHON SEOUL | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/27/2022 | 8542326900 | INTEGRATED CHIP,MONOLITHIC,DIGITAL,MEMORY,FLASH-ES PROM,MEMORY VOLUME MORE THAN 512 MBIT, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 4.65 | 75329.6 | South Korea | INCHHON SEOUL | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/12/2022 | 8542326900 | INTEGRATED MONOLITHIC MEMORY CHIP (FLASH-ES PROM) FOR SURFACE MOUNTING ON PRINTED BOARDS (NOT RADIATION RESISTANT, DO NOT HAVE ENCRYPTION FUNCTION (CRYPTOGRAPHY): | 0.44 | 285.05 | Taiwan | MOSCOW RUSSIA | INTELLECT INTECH JSC |