1/29/2022 | 8542326100 | Flash Es PPZ with memory capacity no more than 512 mibite: electrically erasable rewritable constant flash device in the form of an integral chip, memory capacity 0.064Mbits, voltage 2.7-3.5B art: MB85RS64PNF-G-JNERE1 - 3000 pcs | 1.5 | 1522.1 | Japan | MOSCOW RUSSIA | DIDZHIKOM LLC |
1/26/2022 | 8542326100 | INTEGRATED MONOLITHIC FLASH MEMORY CHIP IS DESIGNED FOR SURFACE MOUNTING ON A PRINTED BOARD IN TELECOMMUNICATIONS EQUIPMENT, NOT A SCRAP OF ELECTRICAL EQUIPMENT, NON-MILITARY PURPOSE ART: S25FL127SABMFI101 - 6250 PCS | 1.7 | 29370.2 | Malaysia | MOSCOW RUSSIA | SCAN ENGINEERING PROF LLC |
1/26/2022 | 8542326100 | INTEGRATED MEMORY CHIP IS A MULTILAYER MONOLITHIC IC FOR INDUSTRIAL PROGRAMMABLE CONTROLLERS, | 0 | 6.06 | Malaysia | ST PETERSBURG RUSSIA | ENERGOSNABSERVICE LLC |
1/26/2022 | 8542326100 | INTEGRATED MEMORY CHIP IS A MULTILAYER MONOLITHIC IC FOR INDUSTRIAL PROGRAMMABLE CONTROLLERS, | 0.01 | 205.5 | Malaysia | ST PETERSBURG RUSSIA | ENERGOSNABSERVICE LLC |
1/25/2022 | 8542326100 | ELECTRONIC INTEGRAL CIRCUITS, ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY DEVICES: FLASH MEMORY CHIP WITH 4 Mbit MEMORY CAPACITY FOR SURFACE MOUNTING ON PRINTED BOARDS, FOR WIDE APPLICATIONS IN VARIOUS | 0.05 | 85.14 | Philippines | ALFELD GERMANY | EHTIINDASTRI LLC |
1/19/2022 | 8542326100 | ELECTRONIC INTEGRAL CIRCUITS, ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY DEVICES: FLASH MEMORY CHIP WITH 256 Mbit MEMORY CAPACITY FOR SURFACE MOUNTING ON PRINTED BOARDS, FOR WIDE APPLICATIONS IN VARIOUS | 2.56 | 13793.3 | Taiwan | ALFELD GERMANY | EHTIINDASTRI LLC |
1/12/2022 | 8542326100 | FLASH-ES PROM WITH A MEMORY MAXIMUM 512 MBIT: ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT FLASH MEMORY DEVICE IN THE FORM OF AN INTEGRAL CHIP, MEMORY VOLUME 1 Mbit, VOLTAGE FROM 2.5-TRM-M223M0 ART: 2.5-5.5V ART: | 1.12 | 884.38 | China | MOSCOW RUSSIA | DIDZHIKOM LLC |
1/16/2022 | 8542326100 | FLASH-ES PROM WITH A MEMORY MAXIMUM 512 MBIT: ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT FLASH MEMORY IN THE FORM OF AN INTEGRAL CHIP, MEMORY VOLUME 1 Mbit, VOLTAGE FROM 2.5-5.5M0 | 5.75 | 22703.8 | China | MOSCOW RUSSIA | DIDZHIKOM LLC |
1/16/2022 | 8542326100 | Flash Es PPZ with memory no more than 512 mibite: electrically erasable reprogrammed constant storage flash device, as an integral chip, memory capacity of 0.016 Mbps, voltage 2.5-5.5V Art: M24C16-RMN6TP - 2000 pcs | 1.4 | 1120.8 | China | MOSCOW RUSSIA | DIDZHIKOM LLC |
1/13/2022 | 8542326100 | INTEGRATED MONOLITHIC ANALOGUE FLASH MEMORY CHIP WITH 128 Mbit MEMORY, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN FIRE AUTOMATIC EQUIPMENT, DOES NOT HAVE ENCRYPTION FUNCTION (CRYPTOGRAPHY) | 0.31 | 192.6 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |