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1/24/2022 | 8542399010 | MULTILAYER MONOLITHIC INTEGRATED MICROCIRCUIT WITH BUILT-IN POWER TRANSISTORS, DIODES AND RESISTORS. IT IS MANUFACTURED ON A SEMICONDUCTOR SUBSTRATE AND PLACED IN A NON-REMOVABLE CASE MADE FROM DIELECTRIC MATERIAL - PLASTIC. | 1 | 1915.57 | China | CHANGZHOU CHINA | NPP TEPLOVODOKHRAN LLC |
1/26/2022 | 8542399010 | MULTILAYER MONOLITHIC INTEGRATED MICROCIRCUIT WITH BUILT-IN POWER TRANSISTORS, DIODES AND RESISTORS. IT IS MANUFACTURED ON A SEMICONDUCTOR SUBSTRATE AND PLACED IN A NON-REMOVABLE CASE MADE FROM DIELECTRIC MATERIAL - PLASTIC. | 3.64 | 1690.11 | China | RYAZAN OBLAST | NPP TEPLOVODOKHRAN LLC |
1/26/2022 | 8542399010 | MULTILAYER MONOLITHIC INTEGRATED MICROCIRCUIT WITH BUILT-IN POWER TRANSISTORS, DIODES AND RESISTORS. IT IS MANUFACTURED ON A SEMICONDUCTOR SUBSTRATE AND PLACED IN A NON-REMOVABLE CASE MADE FROM DIELECTRIC MATERIAL - PLASTIC. | 3.56 | 1325.42 | China | RYAZAN OBLAST | NPP TEPLOVODOKHRAN LLC |
1/26/2022 | 8542399010 | MULTILAYER MONOLITHIC INTEGRATED MICROCIRCUIT WITH BUILT-IN POWER TRANSISTORS, DIODES AND RESISTORS. IT IS MANUFACTURED ON A SEMICONDUCTOR SUBSTRATE AND PLACED IN A NON-REMOVABLE CASE MADE FROM DIELECTRIC MATERIAL - PLASTIC. | 5.78 | 1301.96 | China | RYAZAN OBLAST | NPP TEPLOVODOKHRAN LLC |