1/25/2022 | 8541600000 | CERAMIC RESONATOR. MADE OF CERAMIC MATERIALS, HAS A PIEZOELECTRIC EFFECT AND WORK AS A MECHANICAL RESONATOR. INSTALLED ON THE PRINTED BOARD AND SERVES AS A REFERENCE FREQUENCY GENERATOR. USED IN INDUSTRIAL | 10.92 | 2442.21 | China | BUSAN | FNS CIS LLC Software P P LLC OLG ELECTRONICS RUS |
1/16/2022 | 8541590000 | SEMICONDUCTOR DEVICES - SENSORS, THE PRINCIPLE OF WHICH IS BASED ON THE ELECTRONIC PROPERTIES OF SEMICONDUCTOR MATERIALS, FOR REPAIR AND MAINTENANCE OF VEHICLES, | 0.15 | 109.94 | China | TORINO ITALY | AO EFSIEY RUS |
1/17/2022 | 8541590000 | SEMICONDUCTOR DEVICES - SENSORS, THE PRINCIPLE OF WHICH IS BASED ON THE ELECTRONIC PROPERTIES OF SEMICONDUCTOR MATERIALS, FOR REPAIR AND MAINTENANCE OF VEHICLES, | 0.41 | 248.39 | China | TORINO ITALY | AO EFSIEY RUS |
1/10/2022 | 8541410009 | PHOTO-SENSITIVE SEMICONDUCTOR ELEMENT: DETECTOR OF PHOTOTRANSISTOR TYPE NPN CONFIGURATION. SEMICONDUCTOR MATERIAL - SILICON. MAXIMUM SPECTRAL SENSITIVITY 940 NM. COLLECTOR LIGHT CURRENT 4.977 MA. COLLECTOR DARK CURRENT 50 MA. CELSI | 6 | 6164.01 | China | COWLUN | ELECTROKOM VPK LLC |
1/14/2022 | 8541600000 | CERAMIC RESONATOR. MADE OF CERAMIC MATERIALS, HAS A PIEZOELECTRIC EFFECT AND WORK AS A MECHANICAL RESONATOR. INSTALLED ON THE PRINTED BOARD AND SERVES AS A REFERENCE FREQUENCY GENERATOR. FREQUENCY 10MHz. USED | 14.29 | 3043.64 | China | BUSAN | FNS CIS LLC Software P P LLC OLG ELECTRONICS RUS |
1/31/2022 | 8541290000 | MOSFET TRANSISTOR, WHICH OPERATING PRINCIPLE IS BASED ON RESISTANCE MODULATION BY A TRANSVERSE ELECTRIC FIELD OF A SEMICONDUCTOR MATERIAL. | 0.18 | 146.08 | China | SHENZHEN CHINA | NPO GALILEOSKAY LLC |
1/13/2022 | 8541290000 | TRANSISTOR, IS AN ELECTRONIC DEVICE OF SEMICONDUCTOR MATERIAL, GENERALLY WITH THREE TERMINALS, ALLOWING INPUT SIGNALS TO CONTROL CURRENT IN AN ELECTRICAL CIRCUIT, USED TO AMPLIFY, GENERATE AND CONVERT ELECTRIC | 1.92 | 887.1 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/31/2022 | 8541290000 | MOSFET OPERATING PRINCIPLE OF WHICH IS BASED ON MODULATION OF RESISTANCE BY A TRANSVERSE ELECTRIC FIELD OF A SEMICONDUCTOR MATERIAL | 0.08 | 16.1 | China | SHENZHEN CHINA | NPO GALILEOSKAY LLC |
1/13/2022 | 8541100009 | ZENER DIODE, FOR AUTOMATIC MOUNTING ON THE BOARD. CASE MATERIAL: PLASTIC, DOES NOT CONTAIN RADIOACTIVE SOURCES. DESIGNED TO WORK AT VOLTAGE 6V | 0.01 | 11.43 | China | MOSCOW RUSSIA | SYNERGIA DISTRIBUTION LLC |
1/17/2022 | 8541290000 | MOP TRANSISTORS, RADIO ELECTRONIC COMPONENTS OF SEMICONDUCTOR MATERIAL, ARE NOT PHOTOTRANSISTORS. ALLOW TO CONTROL A SIGNIFICANT CURRENT IN THE OUTPUT CIRCUIT. POWER DISSIPATION MORE THAN 1 W, FOR INSTALLATION ON PRINTED | 0.04 | 453.9 | China | MOSCOW RUSSIA | RADIOFID SYSTEMS LLC |