1/22/2022 | 8542327500 | INTEGRAL MONOLITHIC MICROCIRCUIT, EEPROM MEMORY ES PROM WITH A VOLUME OF 2 Mbit, NOT RADIATION RESISTANT, DO NOT HAVE THE FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), APPLIED FOR SURFACE MOUNTING ON PRINTED BOARDS IN THE MANUFACTURE OF ELECTRONIC EQUIPMENT, | 0.2 | 1690.84 | Taiwan | HONG KONG | PROISTOK LLC |
1/22/2022 | 8542327500 | INTEGRAL MONOLITHIC MICROSCHEMICS, EEPROM MEMORY ES PROM WITH A VOLUME OF 8 Mbit, NOT RADIATION RESISTANT, DO NOT HAVE THE FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), APPLIED FOR SURFACE MOUNTING ON PRINTED BOARDS IN THE MANUFACTURE OF ELECTRONIC EQUIPMENT, | 1.25 | 5737.16 | Taiwan | HONG KONG | PROISTOK LLC |
1/22/2022 | 8542327500 | INTEGRAL MONOLITHIC MICROSCHEMICS, EEPROM MEMORY ES PROM WITH A VOLUME OF 8 Mbit, NOT RADIATION RESISTANT, DO NOT HAVE THE FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), APPLIED FOR SURFACE MOUNTING ON PRINTED BOARDS IN THE MANUFACTURE OF ELECTRONIC EQUIPMENT, | 0.14 | 2500.37 | Taiwan | HONG KONG | PROISTOK LLC |