1/28/2022 | 3818001000 | SILICON ALLOYED, PURIFIED, SINGLE-CRYSTAL, IN THE FORM OF PLATES, POLISHED, INTENDED FOR USE IN MICROELECTRONICS FOR THE MANUFACTURE OF INTEGRATED MICROCIRCUITS: | 368 | 50337.1 | Japan | TOKYO | PJSC MICRON |
1/18/2022 | 3818009000 | GAAS SUBSTRATES IN THE FORM OF DISCS, DOPED, INTENDED FOR FURTHER USE IN THE PROCESS OF GROWING (MANUFACTURING) EPITAXIAL HETEROSTRUCTURES IN A MOCVD HYDRIDE EPITAXY UNIT, FOR MICROELECTRONIC INDUSTRY / NON MILITARY | 87 | 102283 | China | BAODING CITY HEBEI PROVINCE | SIGM PLUS LLC |
1/14/2022 | 3818001000 | SILICON PLATES ALLOYED WITH PHOSPHORUS, ROUND SHAPE. APPLIED IN THE PRODUCTION OF SEMICONDUCTORS FOR THE PROCESS OF MECHANICAL CUTTING AND EPITAXIAL GROWTH OF SEMICONDUCTOR LAYERS. WILL BE USED FOR MANUFACTURING OF CRYSTALS OF MICROWAVE, | 5.42 | 4150.98 | South Korea | SEOUL | NPK PROGRESS LLC |
1/12/2022 | 3818001000 | CHEMICAL ELEMENTS ALLOYED IN THE FORM OF PLATES. INTENDED FOR USE IN ELECTRONICS IN THE MANUFACTURE OF SEMICONDUCTOR STRUCTURES. NOT WASTE. ARE NOT A SOURCE OF IONIZING RADIATION. | 2.65 | 2534.76 | United States of America | SANTA CLARA CA USA | SCIENTIFIC DEVICES AND SYSTEMS LLC |
1/13/2022 | 3818009000 | SUBSTRATES INP (INDIUM PHOSPHIDE), IN THE FORM OF DISCS, DOPED, INTENDED FOR FURTHER USE IN THE PROCESS OF GROWING (MANUFACTURING) EPITAXIAL HETEROSTRUCTURES IN A MOCVD HYDRIDE EPITAXY UNIT, FOR THE MICROELECTRONIC INDUSTRY /NOT | 1.85 | 8049.71 | China | FREMONT | STC LIS LLC |