1/13/2022 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. NO FUNCTION | 4.32 | 8368.74 | Taiwan | KASSEL GERMANY | PROSOFT SYSTEMS LLC |
1/14/2022 | 8542323900 | DRAM RAM DRAM (DOS) FORM FACTOR DDR4 UDIMM 3200 MHz 288-PIN (PC4-25600), 16 GB CAPACITY 2 X (1 GB (1024 MB) X 8), POWER SUPPLY 1.2 V DC, USED IN INDUSTRIAL COMPUTERS | 2.4 | 4490.19 | Taiwan | ST PETERSBURG RUSSIA | NIEHSHANTS PROMAVTOMATIKA LLC |
1/14/2022 | 8542323900 | DRAM RAM DRAM (DOS) FORM FACTOR DDR3 SO-DIMM 1866 MHz 204-PIN (PC3-14900), CAPACITY 2 GB (256 MB X 8), POWER SUPPLY 1.35 V OR 1.5 V DC USES IN INDUSTRIAL COMPUTERS | 0.19 | 175.29 | Taiwan | ST PETERSBURG RUSSIA | NIEHSHANTS PROMAVTOMATIKA LLC |
1/14/2022 | 8542323900 | DRAM RAM DRAM (DOS) FORM FACTOR DDR4 SO-DIMM 2666 MHz 260-PIN (PC4-21300), 32 GB CAPACITY 2 X (2 GB (2048 MB) X 8), POWER SUPPLY 1.2 VDC CURRENT USED IN INDUSTRIAL COMPUTER | 0.48 | 1797.64 | Taiwan | ST PETERSBURG RUSSIA | NIEHSHANTS PROMAVTOMATIKA LLC |
1/14/2022 | 8542323900 | DRAM RAM DRAM (DOS) FORM FACTOR DDR4 SO-DIMM 2666 MHz 260-PIN (PC4-21300), 32 GB CAPACITY 2 X (2 GB (2048 MB) X 8), POWER SUPPLY 1.2 VDC CURRENT USED IN INDUSTRIAL COMPUTER | 1.73 | 7078.23 | Taiwan | ST PETERSBURG RUSSIA | NIEHSHANTS PROMAVTOMATIKA LLC |
1/14/2022 | 8542323900 | DRAM RAM DRAM (DOS) FORM FACTOR DDR4 SO-DIMM 2133 MHz 260-PIN (PC4-17000), CAPACITY 8 GB 2 X (512 MB X 8), POWER SUPPLY 1.2 VDC, USED INDUSTRIAL COMPUTERS VK | 0.38 | 611.55 | Taiwan | ST PETERSBURG RUSSIA | NIEHSHANTS PROMAVTOMATIKA LLC |
1/23/2022 | 8542323900 | INTEGRATED, MONOLITHIC, DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY CAPACITY OF MORE THAN 512 MBIT, WITHOUT A FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), NOT A SCRAP OF ELECTRICAL EQUIPMENT, ACCESSORIES FOR INDUSTRIAL ASSEMBLY ASSEMBLY | 1.15 | 1116.55 | Taiwan | TAIPEI AIRPORT TAIWAN | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/25/2022 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. NO FUNCTION | 0.04 | 28.58 | Taiwan | PRAGUE | URAL TELECOM SYSTEMS LLC |
1/21/2022 | 8542323900 | DRAM RAM DRAM (DOS) FORM FACTOR DDR3 SO-DIMM 1866 MHz 204-PIN (PC3-14900), CAPACITY 2 GB (256 MB X 8), POWER SUPPLY 1.35 V OR 1.5 V DC USES IN INDUSTRIAL COMPUTERS | 0.72 | 633.67 | Taiwan | ST PETERSBURG RUSSIA | NIEHSHANTS PROMAVTOMATIKA LLC |
1/21/2022 | 8542323900 | MONOLITHIC INTEGRAL CIRCUIT FOR MOUNTING ON PRINTED BOARDS OF RADIO ELECTRONIC DEVICES, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS, DOES NOT HAVE THE FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), NOT FOR MILITARY PURPOSES, NOT RADIATION RESISTANT, NOT SCRAP | 0.11 | 117.06 | Taiwan | IZHEVSK KIYASOVO | ELITAN TRADE LLC |