| 1/20/2022 | 8541490000 | PHOTO-SENSITIVE SEMICONDUCTOR DEVICES, NOT SCRAP OF ELECTRICAL EQUIPMENT: PHOTODIODE, SEMICONDUCTOR, TYPE OF SEMICONDUCTOR - INDIUM GALLIUM ARSENIDE/INDIUM PHOSPHIDE, WORKING WAVE RANGE 1100 - 1600 NM, USED IN OPTICAL FIBER COMMUNICATIONS | 0.1 | 1851.1 | South Korea | INCHON AIRPORT KOREA | LLS JSC |
| 1/31/2022 | 8541410009 | PHOTODIODS. APPLIED FOR TRANSMISSION OF CABLE TELEVISION SIGNALS. DESIGNED FOR CONVERSION OF OPTICAL SIGNAL INTO RADIO FREQUENCY. OPERATING VOLTAGE 5 V. MAXIMUM INPUT OPTICAL POWER +4 dBm. TYPE OF SEMICONDUCTOR INDIUM-ARSENIDE GALI | 83 | 12473.4 | China | YICHANG | POINT OPORA LLC |
| 1/26/2022 | 8541410002 | LIGHT EMITTING DIODES, INORGANIC, ON A RIGID PRINTED BOARD, NON-LASER, INTENDED FOR INSTALLATION ON THE PANEL OF INDUSTRIAL EQUIPMENT, NOT SCRAP ELECTRICAL EQUIPMENT: LED, SEMICONDUCTOR TYPE - INDIUM GALLIUM NITRIDE, NOT UV AND IR RADIATION | 0 | 6.35 | Taiwan | SHENZHEN CHINA | RONTA LLC |
| 1/11/2022 | 8541410004 | Light-emitting diode (LED) NON-ORGANIC. IS AN OPTICAL LENS WITH TWO TERMINALS FOR INSTALLATION ON A BOARD BY THE SURFACE MOUNTING METHOD, BETWEEN THE TERMINALS IS PN JUNCTION ON A CRYSTAL FROM ALUMINUM-GALLIUM-INDIUM PHOSPHIDE. WHEN CURRENT IS PASSED THROUGH | 23.3 | 6419.91 | China | HONG KONG | ENERGOMERA JSC |
| 1/17/2022 | 8541490000 | LIGHT EMITTING DIODES (SEMICONDUCTOR IS MADE FROM GALLIUM ARSENIDE AND INDIUM PHOSPHIDE, COMPONENT OF ELECTRICAL APPLIANCES BUILT AT PRODUCTION; | 1.08 | 128.9 | China | M O S K V A | INTERFORWARD LLC |
| 1/26/2022 | 8541410002 | LIGHT EMITTING DIODES, INORGANIC, ON A RIGID PRINTED BOARD, NON LASER, INTENDED FOR INSTALLATION ON THE PANEL OF INDUSTRIAL EQUIPMENT, NOT SCRAP ELECTRICAL EQUIPMENT: LED, SEMICONDUCTOR TYPE - ALUMINUM, GALLIUM AND INDIUM PHOSPIDE (INGAALP), NOT | 0 | 5.11 | Taiwan | SHENZHEN CHINA | RONTA LLC |
| 1/26/2022 | 8541410002 | LIGHT EMITTING DIODES, INORGANIC, ON A RIGID PRINTED BOARD, NON LASER, INTENDED FOR INSTALLATION ON THE PANEL OF INDUSTRIAL EQUIPMENT, NOT SCRAP ELECTRICAL EQUIPMENT: LED, SEMICONDUCTOR TYPE - ALUMINUM, GALLIUM AND INDIUM PHOSPIDE (INGAALP), NOT | 0 | 5.66 | Taiwan | SHENZHEN CHINA | RONTA LLC |
| 1/20/2022 | 8541410004 | LIGHT EMITTING DIODES (LED) FOR BOARD MOUNTING. WITHOUT POWER SUPPLY. WITHOUT POWER CORD. WITHOUT SWITCH. FOR VOLTAGE 3 VOLT. NOT ORGANIC LEDS. INDIUM GALLIUM NITRIDE (INGAN) CRYSTAL, SILICON CARBIDE (SIC) SUBSTRATE. RADIOACTIVE SOURCES | 5.7 | 20798.1 | Malaysia | MOSCOW RUSSIA | MICROEM JSC |
| 1/15/2022 | 8541410004 | LIGHT EMITTING DIODES (LED) FOR BOARD MOUNTING. WITHOUT POWER SUPPLY. WITHOUT POWER CORD. WITHOUT SWITCH. FOR VOLTAGE 3 VOLT. NOT ORGANIC LEDS. INDIUM GALLIUM NITRIDE (INGAN) CRYSTAL, SILICON CARBIDE (SIC) SUBSTRATE. RADIOACTIVE SOURCES | 389.39 | 142220.7 | South Korea | SEOUL | MICROEM JSC |