| 1/16/2022 | 8112997001 | GALLIUM; INDIUM, PRODUCTS FROM THEM, FOR INDUSTRIAL ANALYTICAL SYSTEMS: | 0.03 | 169.53 | Switzerland | MOSCOW RUSSIA | METTLER TOLEDO VOSTOK JSC |
| 1/8/2022 | 7020008000 | CONDUCTIVE GLASS WITH ITO-COATING (INDIUM-TIN OXIDE) FOR THE MICROELECTRONIC INDUSTRY AND IS USED IN THIN-LAYER PHOTOCONVERTERS TO CREATE TRANSPARENT ELECTRODES IN SEMICONDUCTOR PHOTORECEIVERS., NOT FOR MEDICINE, NOT FOR | 19 | 2576 | China | MOSCOW RUSSIA | TRADING HOUSE CHIMMED LLC |
| 1/13/2022 | 3818009000 | SUBSTRATES INP (INDIUM PHOSPHIDE), IN THE FORM OF DISCS, DOPED, INTENDED FOR FURTHER USE IN THE PROCESS OF GROWING (MANUFACTURING) EPITAXIAL HETEROSTRUCTURES IN A MOCVD HYDRIDE EPITAXY UNIT, FOR THE MICROELECTRONIC INDUSTRY /NOT | 1.85 | 8049.71 | China | FREMONT | STC LIS LLC |
| 1/14/2022 | 8112997001 | PLD GASKET, INDIUM AND TIN ALLOY GASKET, IS A PART OF THE PLD SERIES SEMICONDUCTOR LASER MODULE HOUSING AND IS USED TO IMPROVE THERMAL CONTACT BETWEEN PLATE AND STAND AND BETWEEN LASER DIODE AND STAND, (NON-MAILITARY | 0.32 | 179.05 | United States of America | MOSCOW RUSSIA | SCIENTIFIC AND TECHNICAL ASSOCIATION IRE POLYUS LLC |
| 1/15/2022 | 8112997001 | PLD GASKET, INDIUM AND TIN ALLOY GASKET, IS A PART OF THE PLD SERIES SEMICONDUCTOR LASER MODULE HOUSING AND IS USED TO IMPROVE THERMAL CONTACT BETWEEN PLATE AND STAND AND BETWEEN LASER DIODE AND STAND, (NON-MAILITARY | 9.2 | 3729.69 | Germany | MOSCOW RUSSIA | SCIENTIFIC AND TECHNICAL ASSOCIATION IRE POLYUS LLC |
| 1/17/2022 | 8311300000 | SOLDER IN THE FORM OF INDIUM WIRE ON A REEL 3.048 M INCLUDED WITH 2 ML FLUX FOR SOLDERING | 0.46 | 32.28 | Canada | HONGKONG AIRPORT | ALTRABETA LLC |
| 1/15/2022 | 8541410004 | LIGHT EMITTING DIODES (LED) FOR BOARD MOUNTING. WITHOUT POWER SUPPLY. WITHOUT POWER CORD. WITHOUT SWITCH. FOR VOLTAGE 3 VOLT. NOT ORGANIC LEDS. INDIUM GALLIUM NITRIDE (INGAN) CRYSTAL, SILICON CARBIDE (SIC) SUBSTRATE. RADIOACTIVE SOURCES | 389.39 | 142220.7 | South Korea | SEOUL | MICROEM JSC |
| 1/11/2022 | 8538909908 | TOUCH PANEL (TOUCH SCREEN) FOR OPERATOR'S PANEL IN INDUSTRIAL AUTOMATION. IS A 7.0 TRANSPARENT RESISTIVE TOUCHSCREEN CONSISTING OF 2 TRANSPARENT CONDUCTIVE LAYERS OF INDIUM OXIDE AND TIN OXIDE (ITO) SEPARATED | 44 | 4489.94 | China | SHENZHEN CHINA | INFORMATION TECHNOLOGIES LLC |
| 1/18/2022 | 3818009000 | SEMICONDUCTOR WATER FROM SINGLE-CRYSTAL GALLIUM ARSENIDE (GAAS) WITH SURFACE APPLIED EPITAXIAL HETEROSTRUCTURE IN THE FORM OF ULTRA-THIN LAYERS OF GALLIUM ARSENIDE AND INDIUM-GALLIUM ARSENIDE (INGAAS) WITH A TOTAL THICKNESS OF 3.6 MKM. PLATES | 0.86 | 12505.7 | China | SUZHOU | NPF MIKRAN JSC |
| 1/17/2022 | 8541490000 | LIGHT EMITTING DIODES (SEMICONDUCTOR IS MADE FROM GALLIUM ARSENIDE AND INDIUM PHOSPHIDE, COMPONENT OF ELECTRICAL APPLIANCES BUILT AT PRODUCTION; | 1.08 | 128.9 | China | M O S K V A | INTERFORWARD LLC |