1/24/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE EEPROM (EEPROM) WITH MEMORY 128 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 18.08 | Philippines | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/6/2022 | 8542327500 | DRK ELECTRONIC, INTEGRAL, MONOLITHIC MICROCIRCUITS -: STORAGE DEVICE: TYPE ES: PROM (EEPROM): C C, MEMORY CAPACITY: 64 KBIT (RANGE, OPERATING TEMPERATURES -40: +85 C) (NOT: HAZARDOUS WASTE) | 0.02 | 21.77 | Thailand | SINGAPORE AIRPORT | SVARNOY LLC |
1/24/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE EEPROM (EEPROM) WITH A MEMORY CAPACITY OF 512 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 11.21 | China | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/17/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - FPVM CONFIGURATION MEMORY (EEPROM STORAGE DEVICE - EEPROM) WITH A MEMORY CAPACITY OF 1 MBIT. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.46 | 2095.97 | Philippines | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/17/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE EEPROM (EEPROM) WITH A MEMORY SIZE OF 1 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 10.17 | Philippines | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/17/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE EEPROM (EEPROM) WITH MEMORY 4 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0 | 3.5 | Thailand | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/18/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE EEPROM (EEPROM) WITH MEMORY 16 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 11.22 | Thailand | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/17/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE EEPROM (EEPROM) WITH A MEMORY SIZE OF 512 KBIT. (OPERATING TEMPERATURE RANGE: -40...+125 C) (NOT HAZARDOUS WASTE) | 0.07 | 89.88 | China | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/18/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE EEPROM (EEPROM) WITH MEMORY 4 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0 | 3.75 | China | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/14/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE EEPROM (EEPROM) WITH A MEMORY SIZE OF 2 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0 | 4.08 | Thailand | MANSFIELD CENTER | PM ELECTRONICS LLC |