1/31/2022 | 8541210000 | BIPOLAR TRANSISTOR BC847CW SEMICONDUCTOR ELEMENT, NPN STRUCTURE, IN SC-70 CASE. MAXIMUM COLLECTOR-EMMITTER VOLTAGE: 45V MAXIMUM COLLECTOR DC CURRENT: 100mA OPERATING FREQUENCY: UP TO 100MHz OPERATING TEMPERATURE: -65:+150C 300000 PCS | 2.73 | 1898.18 | China | SHENZHEN CHINA | IE SiNitsyH Ilya AleksaHdrovich |
1/31/2022 | 8541210000 | BIPOLAR TRANSISTOR BCR135W SEMICONDUCTOR ELEMENT, NPN STRUCTURE, IN SOT-323 CASE. MAXIMUM COLLECTOR-EMMITTER VOLTAGE: 50V MAXIMUM COLLECTOR DC CURRENT: 100MA OPERATING FREQUENCY: UP TO 100MHz OPERATING TEMPERATURE: -65:+150C 700 PCS | 0.08 | 102.39 | China | SHENZHEN CHINA | IE SiNitsyH Ilya AleksaHdrovich |
1/31/2022 | 8541210000 | TRANSISTOR PMV20ENR SEMICONDUCTOR ELEMENT, NPN STRUCTURE, IN SOT-23-3 CASE. MAXIMUM COLLECTOR-EMMITTER VOLTAGE: 30V MAXIMUM COLLECTOR DC CURRENT: 5.2A OPERATING FREQUENCY: UP TO 100MHz OPERATING TEMPERATURE: -65:+150C 60 PCS | 0 | 17.88 | China | SHENZHEN CHINA | IE SiNitsyH Ilya AleksaHdrovich |
1/31/2022 | 8541210000 | BIPOLAR TRANSISTOR BCR135W SEMICONDUCTOR ELEMENT, NPN STRUCTURE, IN SOT-323 CASE. MAXIMUM COLLECTOR-EMMITTER VOLTAGE: 50V MAXIMUM COLLECTOR DC CURRENT: 100MA OPERATING FREQUENCY: UP TO 100MHz OPERATING TEMPERATURE: -65:+150C 200 PCS | 0.02 | 30.9 | China | SHENZHEN CHINA | IE SiNitsyH Ilya AleksaHdrovich |
1/13/2022 | 8541210000 | TRANSISTORS, EXCEPT PHOTOTRANSISTORS WITH A DISSIPATION POWER LESS THAN 1 W, NOT A SCRAP OF ELECTRICAL EQUIPMENT, NON-MILITARY PURPOSE, NO RADIOACTIVE SOURCES, DOES NOT HAVE ENCRYPTION AND CRYPTOGRAPHY FUNCTIONS, IS NOT A HIGH-FREQUENCY DEVICE, | 0.97 | 135.5 | China | MOSCOW RUSSIA | UPZ PROMSVYAZ JSC |
1/14/2022 | 8541210000 | TRANSISTORS, EXCEPT PHOTOTRANSISTORS WITH A DISSIPATION OF LESS THAN 1 W, ARE NOT RADIO ELECTRONIC AND/OR HIGH FREQUENCY DEVICES, NON MILITARY PURPOSE, NOT SCRAP ELECTRICAL EQUIPMENT, USED FOR INDUSTRIAL ASSEMBLY, SEE APPENDIX:: | 0.34 | 164.6 | China | MOSCOW RUSSIA | TEKONGROUP JSC |