1/23/2022 | 8542326100 | FLASH-ES PROM WITH MEMORY MAXIMUM 512 MB: | 0.15 | 28.61 | Japan | MOSCOW RUSSIA | ENDRESS HOUSER LLC |
1/29/2022 | 8542326100 | Flash Es PPZ with memory capacity no more than 512 mibite: electrically erasable rewritable constant flash device in the form of an integral chip, memory capacity 0.064Mbits, voltage 2.7-3.5B art: MB85RS64PNF-G-JNERE1 - 3000 pcs | 1.5 | 1522.1 | Japan | MOSCOW RUSSIA | DIDZHIKOM LLC |
1/11/2022 | 8523511000 | STORAGE DEVICES, SEMICONDUCTOR, SOLID STATE, NON-VOLUME REPLACABLE STORAGE DRIVES - EXTERNAL MEMORY CARDS: USB FLASH AND MICRO-SD, UNWRITTEN, WITHOUT ENCRYPTION OR CRYPTOGRAPHY; | 4.26 | 591.39 | Japan | BRANIEWO | ECOCOMP LLC |
1/30/2022 | 8542329000 | ELECTRONIC INTEGRAL SCHEMES, DOES NOT CONTAIN CRYPTOGRAPHY (ENCRYPTION) FUNCTIONS, NOT EQUIPMENT SCRAP, NAND FLASH MEMORY, MEMORY SIZE: 4 GBIT, VOLTAGE: 2.7-3.6 V, OPERATING TEMPERATURE: -40-+85 ?, TOTAL-330 PCS; | 0.03 | 790.58 | Japan | TSUEN WAN HONG KONG | SPHERE OF ELECTRONICS LLC |
1/12/2022 | 8542326100 | FLASH-ELECTRICALLY ERASUABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE, THAT IS A MONOLITHIC DIGITAL INTEGRAL CIRCUIT, ASSEMBLED, WITH OUTPUTS, FOR INDUSTRIAL ELECTRONICS SYSTEMS, COMPUTER EQUIPMENT. MEMORY 4MBIT; DIRECTLY | 0.03 | 49.55 | Japan | HONG KONG | VEST OST LLC |
1/17/2022 | 8523511000 | FLASH MEMORY CARD USED IN MEDICAL ANALYZERS: SEE APPENDIX | 0.07 | 87.68 | Japan | MOSCOW RUSSIA | SISMEX RUS LLC |
1/17/2022 | 8542326900 | FLASH-ES PROM WITH MEMORY BOL. 512 MB: | 0 | 179.63 | Japan | PUSHKINO MOSCOW REGION | OMRON ELECTRONICS LLC |
1/29/2022 | 8523511000 | STORAGE DEVICES, SEMICONDUCTOR, SOLID STATE, NON-VOLUME REPLACABLE STORAGE DRIVES - EXTERNAL MEMORY CARDS: USB FLASH AND MICRO-SD, UNWRITTEN, WITHOUT ENCRYPTION OR CRYPTOGRAPHY; | 6.05 | 1207.99 | Japan | BRANIEWO | ECOCOMP LLC |
1/14/2022 | 8523511000 | IMPORT FOR OWN USE - COMPACT FLASH MEMORY CARD FOR CA1500 ANALYZERS: SEE APPENDIX | 0 | 46.21 | Japan | MOSCOW RUSSIA | SISMEX RUS LLC |
1/16/2022 | 8542326100 | Flash Es PPZ with memory no more than 512 mibit: electrically erasable rewritable constant storage device in the form of an integral chip, memory capacity 1Mbit, supply voltage 1.8-3.6V art: MB85RS1MTPNF-G-JNERE1 - 30000 pcs | 30 | 47252.8 | Japan | MOSCOW RUSSIA | DIDZHIKOM LLC |