1/11/2022 | 8542326100 | FLASH-ES PROM WITH A MEMORY OF NO MORE THAN 512 MBIT, INTEGRATED MONOLITHIC CIRCUIT WITH THE FUNCTION OF EEPROM-MEMORY, FIELD OF APPLICATION-USED IN FIBER-OPTIC DEVICES, (NON-MILITARY PURPOSES), : | 2.12 | 5611.64 | Taiwan | MOSCOW RUSSIA | SCIENTIFIC AND TECHNICAL ASSOCIATION IRE POLYUS LLC |
1/21/2022 | 8542326100 | FLASH-ES PROM WITH A MEMORY OF NO MORE THAN 512 MBIT, INTEGRATED MONOLITHIC CIRCUIT WITH THE FUNCTION OF EEPROM-MEMORY, FIELD OF APPLICATION-USED IN FIBER-OPTIC DEVICES, (NON-MILITARY PURPOSES), : | 0.8 | 3480.99 | Thailand | MOSCOW RUSSIA | SCIENTIFIC AND TECHNICAL ASSOCIATION IRE POLYUS LLC |
1/11/2022 | 8542326100 | MICROCIRCUITS - MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT STORAGE DEVICES FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF 4 MBIT FOR USE IN PERSONAL COMPUTERS. NON-MILITARY | 0.83 | 940.7 | Philippines | NOVOSIBIRSK AIRPORT TOLMACHEVO | SIBELKOM LOGISTIC LLC |
1/27/2022 | 8542326100 | MONOLITHIC DIGITAL INTEGRATED CIRCUITS FOR INSTALLATION IN ELECTRONIC BOARDS, STORAGE DEVICES, FLASH-ES PROM WITH A MEMORY CAPACITY NOT BOL. 512 Mbps, NO ENCRYPTION AND CRYPTOGRAM, NOT RADIATION RESISTANT, NON MILITARY USE. | 0.23 | 135.55 | Singapore | MUNICH AIRPORT | TD KTC INLINE GROUP LLC |
1/27/2022 | 8542326100 | MONOLITHIC DIGITAL INTEGRATED CIRCUITS FOR INSTALLATION IN ELECTRONIC BOARDS, STORAGE DEVICES, FLASH-ES PROM WITH A MEMORY CAPACITY NOT BOL. 512 Mbps, NO ENCRYPTION AND CRYPTOGRAM, NOT RADIATION RESISTANT, NON MILITARY USE. | 0.81 | 2069.62 | Singapore | MUNICH AIRPORT | TD KTC INLINE GROUP LLC |
1/11/2022 | 8542326100 | MICROCIRCUITS - MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT STORAGE DEVICES FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF 4 GBIT FOR USE IN PERSONAL COMPUTERS. NON-MILITARY AND | 0.6 | 485.05 | Thailand | NOVOSIBIRSK AIRPORT TOLMACHEVO | SIBELKOM LOGISTIC LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRATED STORAGE DEVICES ELECTRICALLY ERASEABLE COMPLETELY REPROGRAMMABLE PERMANENT STORAGE DEVICES FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY VOLUME OF 16 MBIT FOR USE IN INDUSTRIAL ELECTRIC | 0.38 | 114.75 | Taiwan | EKATERENBURG | VEST OST LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRATED MONOLITHIC SINGLE-CRYSTAL ASSEMBLED, ELECTRICALLY ERASE REPROGRAMMABLE PERMANENT MEMORY DEVICES, FLASH-ES PROM WITH MEMORY MAXIMUM 512 MBIT, NOT WASTE, NOT SCRAP, MEMORY CAPACITY2 | 0.5 | 1203.7 | Taiwan | VANTAA AIRPORT | GAMMA LIMITED LLC |
1/31/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUITS: ELECTRICALLY ERASURE REPROGRAMMABLE PERMANENT MEMORY DEVICES FLASH-ES PROM, FOR MOUNTING ON PRINTED BOARDS, WITHOUT THE CONTENT OF ENCRYPTION (CRYPTOGRAPHIC) MEANS, NON-MILITARY USE | 1 | 1770.82 | Taiwan | TAICHUNG PORT OF TAIWAN CHINA | MT SYSTEMS LLC |
1/24/2022 | 8542326100 | ELECTRONIC INTEGRATED CIRCUITS, REPRESENTING MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT - FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF NO MORE THAN 512MBIT, FOR USE IN HOUSEHOLD | 1.47 | 696 | China | EKATERENBURG | VEST OST LLC |