1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 46.1 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 49.4 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 47.2 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 55 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 44.15 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 45.08 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/20/2022 | 8542324500 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. NO FUNCTION | 0.03 | 623.49 | China | PRAGUE | URAL TELECOM SYSTEMS LLC |
1/21/2022 | 8542324500 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. NO FUNCTION | 0.02 | 170.3 | China | PRAGUE | URAL TELECOM SYSTEMS LLC |
1/24/2022 | 8542324500 | ELECTRONIC INTEGRATED STATIC RANDOM MEMORY DEVICES (SRAM) FOR MOUNTING ON PRINTED BOARDS IN SYSTEMS OF INDUSTRIAL ELECTRONICS OF CIVIL PURPOSE. DO NOT CONTAIN ENCRYPTION (CRYPTOGRAPHIC) DEVICES. PACKED IN INDIV | 0.08 | 1141.21 | China | SHENZHEN CHINA | VEST OST LLC |
1/18/2022 | 8542324500 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. NO FUNCTION | 0.01 | 52.5 | China | MOSCOW RUSSIA | URAL TELECOM SYSTEMS LLC |