1/11/2022 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. | 0.1 | 349.83 | Taiwan | KOWLOON CHINA | TARGET ELECTRONICS LLC |
1/11/2022 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. | 1.06 | 1146.85 | Taiwan | MOSCOW CITY | URAL TELECOM SYSTEMS LLC |
1/28/2022 | 8542323100 | INTEGRATED MONOLITHIC ANALOGUE DYNAMIC MEMORY CHIP WITH RANDOM ACCESS, MEMORY VOLUME 512 MBIT, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS. GENERAL CIVIL APPLICATION. NOT FOR MILITARY PURPOSES. NOT APPLICABLE IN | 0.01 | 137.43 | Taiwan | SAR HONG KONG | MICROSAN LLC |
1/14/2022 | 8542323100 | MICROSCHEMICS OF SYNCHRONOUS DYNAMIC MEMORY (SDRAM) ELECTRONIC INTEGRAL DIGITAL, ASSEMBLED, WITH OUTPUTS; DESIGNED FOR MOUNTING ON PRINTED BOARDS OF COMPUTER EQUIPMENT, INDUSTRIAL ELECTRONICS EQUIPMENT, MEMORY 256MBIT. NOT USED | 0.91 | 2329.87 | Taiwan | HONG KONG | VEST OST LLC |
1/12/2022 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. NO FUNCTION | 0.98 | 5510.24 | Taiwan | PRAGUE | URAL TELECOM SYSTEMS LLC |