1/21/2022 | 8542326900 | MONOLITHIC ELECTRONIC INTEGRAL CIRCUITS, FLASH-ES PROM, WITH A VOLUME OF 32 GBIT, MODEL MT29F, ARTICLE MT29F32G08ABAAAWP-ITZ:A - 80 PCS. NOT SCRAP OF ELECTRICAL EQUIPMENT, NOT WASTE. THESE PRODUCTS ARE USED IN TELECOMMUNICATION EQUIPMENT. | 0.81 | 2738.5 | Taiwan | MOSCOW RUSSIA | TIMKOM LLC |
1/27/2022 | 8542326900 | MONOLITHIC ELECTRONIC INTEGRAL CIRCUITS, FLASH-ES PROM, WITH A VOLUME OF 128 GBIT, MODEL MT29F, ARTICLE MT29F128G08AJAAAWP-ITZ:A - 175 PCS. NOT SCRAP OF ELECTRICAL EQUIPMENT, NOT WASTE. THESE PRODUCTS ARE USED IN TELECOMMUNICATION EQUIPMENT. | 1.1 | 18551.9 | Taiwan | MOSCOW RUSSIA | TIMKOM LLC |
1/12/2022 | 8542326900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM (NOR) MEMORY DEVICE WITH A MEMORY OF 2 GBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 87.66 | Thailand | ST PETERSBURG RUSSIA | VOSTOK JSC |
1/26/2022 | 8542326900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE FLASH EEPROM (NAND) WITH MEMORY 8 GBIT. (OPERATING TEMPERATURE RANGE: -40...+105 ?) (NOT HAZARDOUS WASTE) | 0.01 | 83.31 | Thailand | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/24/2022 | 8542326900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE OF FLASH-ESPZU TYPE (EMMC FLASH DRIVE) WITH MEMORY 4 GBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.06 | 128.15 | South Korea | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/31/2022 | 8542326900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM (NOR) MEMORY DEVICE WITH A MEMORY OF 2 GBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 166 | Thailand | ST PETERSBURG RUSSIA | VOSTOK JSC |
1/17/2022 | 8542326900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A MEMORY DEVICE (CONFIGURATION MEMORY) OF THE FLASH-EEPROM TYPE WITH A VOLUME OF 8 GBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.17 | 969.56 | Taiwan | LEIPZIG AIRPORT | VOSTOK JSC |
1/14/2022 | 8542326900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE FLASH EEPROM (NAND) WITH MEMORY 1 GBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.03 | 28.82 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |