1/25/2022 | 8542323900 | MONOLITHIC ELECTRONIC INTEGRAL CIRCUITS, DOSAGE WITH MEMORY 4 GBIT, MODEL MT41K256M16TW, ARTICLE MT41K256M16TW-107 IT:P - 296 PCS. NOT SCRAP OF ELECTRICAL EQUIPMENT, NOT WASTE. NOT HOUSEHOLD PURPOSE. DESIGNED TO WORK IN TELECOMMUNICATION OBO | 1.4 | 2160.54 | Taiwan | MOSCOW RUSSIA | MACRO TIM LLC |
1/25/2022 | 8542323900 | INTEGRATED MONOLITHIC MICROCIRCUIT, DYNAMIC RANDOM MEMORY DEVICES WITH 2000 Mbit MEMORY FOR INSTALLATION IN ELECTRONIC BOARDS. NOT WASTE, NOT SCRAP OF ELECTRICAL EQUIPMENT, DOES NOT CONTAIN PRECIOUS METALS, NOT FOR HOUSEHOLD USE | 0.2 | 681.82 | Taiwan | SHENZHEN CHINA | ELECATE LLC |
1/20/2022 | 8542323900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - DYNAMIC RANDOM MEMORY (DOSE) DRAM WITH MEMORY 4 GBIT. (OPERATING TEMPERATURE RANGE: 0...+95 ?) (NOT HAZARDOUS WASTE) | 0.03 | 86.23 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/17/2022 | 8542323900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - DYNAMIC RANDOM MEMORY (DOSE) DRAM WITH MEMORY 2 GBIT. (OPERATING TEMPERATURE RANGE: 0...+95 ?) (NOT HAZARDOUS WASTE) | 0.01 | 19.9 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/18/2022 | 8542323900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - DYNAMIC RANDOM MEMORY (DOSE) DRAM WITH MEMORY 4 GBIT. (OPERATING TEMPERATURE RANGE: -40...+95 ?) (NOT HAZARDOUS WASTE) | 0.1 | 276.16 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/18/2022 | 8542323900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - DYNAMIC RANDOM MEMORY (DOSE) DRAM WITH MEMORY 16 GBIT. (OPERATING TEMPERATURE RANGE: -40...+95 ?) (NOT HAZARDOUS WASTE) | 0.03 | 187.4 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |