| 1/12/2022 | 8542323100 | DYNAMIC RANDOM MEMORY (DOS) WITH A MEMORY OF 256 MBIT USED IN ELECTRONIC CONTROL SYSTEMS OF WASHING MACHINES | 0.08 | 72.83 | Czechia | PRIBOR | REMSCLAD PRACHKA LLC |
| 1/12/2022 | 8542323100 | DYNAMIC RANDOM MEMORY (DOS) WITH A MEMORY OF 256 MBIT USED IN ELECTRONIC CONTROL SYSTEMS OF WASHING MACHINES | 0.02 | 19.33 | Czechia | PRIBOR | REMSCLAD PRACHKA LLC |
| 1/12/2022 | 8542323100 | DYNAMIC RANDOM MEMORY (DOS) WITH 512 MB MEMORY, USED IN ELECTRONIC CONTROL SYSTEMS OF WASHING MACHINES | 0.08 | 35.34 | Taiwan | PRIBOR | REMSCLAD PRACHKA LLC |
| 1/26/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC DYNAMIC RANDOM MEMORY DEVICES (DOSE) DRAM WITH MEMORY 512 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.19 | 225.41 | China | SINGAPORE AIRPORT | SVARNOY LLC |
| 1/21/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - DYNAMIC RANDOM MEMORY (DRAM) WITH 256 MB MEMORY. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.55 | 839.05 | China | MANSFIELD CENTER | PM ELECTRONICS LLC |
| 1/18/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC DYNAMIC RANDOM MEMORY DEVICES (DOSE) DRAM WITH MEMORY 64 MBIT. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.03 | 32.61 | China | MANSFIELD CENTER | PM ELECTRONICS LLC |
| 1/18/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - DYNAMIC RANDOM MEMORY (DRAM) WITH 256 MB MEMORY. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.63 | 838.41 | China | MANSFIELD CENTER | PM ELECTRONICS LLC |
| 1/18/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC DYNAMIC RANDOM MEMORY DEVICES (DOSE) DRAM WITH MEMORY 256 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.4 | 838.26 | China | MANSFIELD CENTER | PM ELECTRONICS LLC |
| 1/29/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC DYNAMIC RANDOM MEMORY DEVICES (DOSE) DRAM WITH MEMORY 512 MBIT. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.04 | 11.19 | China | HONG KONG | IC COMPONENT LLC |
| 1/14/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - DYNAMIC RANDOM MEMORY (DRAM) WITH 512 MB MEMORY. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.01 | 84.38 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |