1/12/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 3.13 | China | MOSCOW RUSSIA | STATUS LLC |
1/12/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 6.52 | China | MOSCOW RUSSIA | STATUS LLC |
1/12/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 3.19 | China | MOSCOW RUSSIA | STATUS LLC |
1/12/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 5.51 | China | MOSCOW RUSSIA | STATUS LLC |
1/21/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 6.09 | China | MOSCOW RUSSIA | STATUS LLC |
1/27/2022 | 8542326100 | MONOLITHIC DIGITAL INTEGRATED CIRCUITS FOR INSTALLATION IN ELECTRONIC BOARDS, STORAGE DEVICES, FLASH-ES PROM WITH A MEMORY CAPACITY NOT BOL. 512 Mbps, NO ENCRYPTION AND CRYPTOGRAM, NOT RADIATION RESISTANT, NON MILITARY USE. | 0.23 | 135.55 | Singapore | MUNICH AIRPORT | TD KTC INLINE GROUP LLC |
1/27/2022 | 8542326100 | MONOLITHIC DIGITAL INTEGRATED CIRCUITS FOR INSTALLATION IN ELECTRONIC BOARDS, STORAGE DEVICES, FLASH-ES PROM WITH A MEMORY CAPACITY NOT BOL. 512 Mbps, NO ENCRYPTION AND CRYPTOGRAM, NOT RADIATION RESISTANT, NON MILITARY USE. | 0.81 | 2069.62 | Singapore | MUNICH AIRPORT | TD KTC INLINE GROUP LLC |
1/26/2022 | 8542326100 | MONOLITHIC ELECTRONIC INTEGRATED CIRCUITS: ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (FLASH-ES PROM), NON RADIATION RESISTANT, NOT SCRAP OF ELECTRICAL EQUIPMENT | 0.03 | 27 | Malaysia | HONG KONG | ONSHOR WIND LLC |
1/26/2022 | 8542326100 | MONOLITHIC ELECTRONIC INTEGRATED CIRCUITS: ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (FLASH-ES PROM), NON RADIATION RESISTANT, NOT SCRAP OF ELECTRICAL EQUIPMENT | 0.28 | 133.71 | Thailand | HONG KONG | ONSHOR WIND LLC |
1/24/2022 | 8542326100 | ELECTRONIC INTEGRATED CIRCUITS, REPRESENTING MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT - FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF NO MORE THAN 512MBIT, FOR USE IN HOUSEHOLD | 1.47 | 696 | China | EKATERENBURG | VEST OST LLC |