1/12/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 3.13 | China | MOSCOW RUSSIA | STATUS LLC |
1/12/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 6.52 | China | MOSCOW RUSSIA | STATUS LLC |
1/12/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 3.19 | China | MOSCOW RUSSIA | STATUS LLC |
1/12/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 5.51 | China | MOSCOW RUSSIA | STATUS LLC |
1/21/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 6.09 | China | MOSCOW RUSSIA | STATUS LLC |
1/24/2022 | 8542326100 | ELECTRONIC INTEGRATED CIRCUITS, REPRESENTING MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT - FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF NO MORE THAN 512MBIT, FOR USE IN HOUSEHOLD | 1.47 | 696 | China | EKATERENBURG | VEST OST LLC |
1/28/2022 | 8542327500 | ELECTRONIC INTEGRATED CIRCUITS - ELECTRICALLY ERASABLE COMPLETELY REPROGRAMMABLE PERMANENT MEMORY DEVICES (ES PROM) EEPROM WITH RAM RAM 2 KBIT (MEMORY CHIP), ASSEMBLED IN A CASE WITH OUTPUTS, FOR INSTALLATION ON PLATE | 0.26 | 144.44 | China | EKATERENBURG | VEST OST LLC |
1/12/2022 | 8542326100 | ELECTRONIC INTEGRATED CIRCUITS, REPRESENTING MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT - FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF NO MORE THAN 512MBIT, FOR USE IN HOUSEHOLD | 0.15 | 685.2 | China | HONG KONG | VEST OST LLC |
1/12/2022 | 8542329000 | INTEGRATED ELECTRONIC CIRCUITS, THAT ARE FERROELECTRIC MEMORY DEVICES WITH RANDOM SELECTION FRAM, NON-VOLUME, FOR USE IN HOUSEHOLD AND INDUSTRIAL ELECTRONICS. PACKED IN SPECIAL PACKAGING NOT FOR RETAIL-PLA | 0.07 | 2408.6 | China | HONG KONG | VEST OST LLC |
1/11/2022 | 8542319010 | 32-BIT MICROCONTROLLERS, REPRESENTING THE ELECTRONIC MONOLITHIC DIGITAL INTEGRATED CIRCUITS, ASSEMBLED IN A CASE WITH OUTPUTS, CONSISTING OF A CORTEX-M0 CORE MICROPROCESSOR, A PROGRAM MEMORY DEVICE (FLASH-ES PROM3) WITH MEMORY | 0.03 | 337.88 | China | SHENZHEN CHINA | VEST OST LLC |