1/21/2022 | 8542329000 | INTEGRATED CIRCUITS: MONOLITHIC ELECTRONIC INTEGRAL CIRCUIT - PERMANENT MEMORY WITH 64BIT C MEMORY | 0 | 19.75 | United States of America | MOSCOW RUSSIA | KOMPEL JSC |
1/30/2022 | 8542329000 | ELECTRONIC INTEGRATED CIRCUITS, DOES NOT CONTAIN CRYPTOGRAPHY (ENCRYPTION) FUNCTIONS, NOT EQUIPMENT SCRAP, FOR INSTALLATION IN ELECTRONIC BOARDS, FPGA - IC CONFIGURATION MEMORY, MEMORY SIZE: 16 Mbit, VOLTAGE: 3.3 V, OPERATING TEMPERATURE: - ?4+8 - | 0.01 | 23.83 | United States of America | TSUEN WAN HONG KONG | SPHERE OF ELECTRONICS LLC |
1/5/2022 | 8542329000 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, NOT FOR FIRE AUTOMATICS, NOT FOR MILITARY PURPOSE, NOT FOR ELECTRICAL EQUIPMENT SCRAP, INTENDED FOR MOUNTING ON ELECTRONIC EQUIPMENT PRINTED BOARDS: | 0.01 | 232.57 | United States of America | SHENZHEN CHINA | ICE COMPONENTS LLC |
1/30/2022 | 8542329000 | ELECTRONIC INTEGRAL CIRCUITS, DOES NOT CONTAIN CRYPTOGRAPHY (ENCRYPTION) FUNCTION, NOT EQUIPMENT SCRAP, FOR INSTALLATION IN ELECTRONIC BOARDS, FPVM - IC CONFIGURATION MEMORY, MEMORY SIZE: 1 Mbit, VOLTAGE: 3.3-5 V, OPERATING TEMPERATURE: -0+70 , TOTAL- | 0.05 | 556.22 | United States of America | TSUEN WAN HONG KONG | SPHERE OF ELECTRONICS LLC |
1/30/2022 | 8542329000 | ELECTRONIC INTEGRAL CIRCUITS, DOES NOT CONTAIN CRYPTOGRAPHY (ENCRYPTION) FUNCTIONS, NOT EQUIPMENT SCRAP, F-RAM MEMORY, MEMORY SIZE: 64 KBIT, VOLTAGE: 2.7-3.65 V, WORKING TEMPERATURE: -40-+85 ?, TOTAL-500 PCS; | 0.2 | 1724.34 | United States of America | TSUEN WAN HONG KONG | SPHERE OF ELECTRONICS LLC |
1/30/2022 | 8542329000 | ELECTRONIC INTEGRAL CIRCUITS, DOES NOT CONTAIN CRYPTOGRAPHY (ENCRYPTION) FUNCTIONS, NOT EQUIPMENT SCRAP, FOR INSTALLATION IN ELECTRONIC BOARDS, FPGA - CONFIGURATION MEMORY IC, MEMORY SIZE: 64 Mbit, VOLTAGE: 3.3 V, OPERATING TEMPERATURE: - ?4+8 - | 0 | 57.59 | United States of America | TSUEN WAN HONG KONG | SPHERE OF ELECTRONICS LLC |
1/30/2022 | 8542329000 | ELECTRONIC INTEGRAL CIRCUITS, DOES NOT CONTAIN CRYPTOGRAPHY (ENCRYPTION) FUNCTIONS, NOT EQUIPMENT SCRAP, NAND FLASH MEMORY, MEMORY SIZE: 4 GBIT, VOLTAGE: 2.7-3.6 V, OPERATING TEMPERATURE: -40-+85 C, TOTAL-20 PCS; | 0.01 | 57.7 | United States of America | TSUEN WAN HONG KONG | SPHERE OF ELECTRONICS LLC |