1/25/2022 | 8542326100 | ELECTRONIC MONOLITHIC INTEGRAL CIRCUIT OF IN-SYSTEM PROGRAMMABLE CONFIGURATION MEMORY, TYPE - FLASH (ELECTRICALLY ERASABLE PERMANENT STORAGE DEVICE), VOLUME 4 Mbit. DESIGNED FOR SURFACE MOUNTING ON A PRINTED BOARD. NOT ABOUT | 0.31 | 215.44 | Taiwan | SHENZHEN CHINA | ELECATE LLC |
1/20/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 5.5 V OPERATING TEMPERATURE FROM - 40 TO + 85 64 MB | 0 | 63.23 | Taiwan | MONTREAL CANADA | ALTRABETA LLC |
1/20/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUITS: ELECTRICALLY ERASURE REPROGRAMMABLE PERMANENT MEMORY DEVICES FLASH-ES PROM, FOR MOUNTING ON PRINTED BOARDS, WITHOUT THE CONTENT OF ENCRYPTION (CRYPTOGRAPHIC) MEANS, NON-MILITARY USE | 3.65 | 1678.28 | Taiwan | TAICHUNG PORT OF TAIWAN CHINA | MT SYSTEMS LLC |
1/16/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT MEMORY IN THE FORM OF INTEGRAL MICROCIRCUIT VOLTAGE 3.6 V OPERATING TEMPERATURE FROM - 40 TO + 85 2 MB | 0.01 | 9.79 | Taiwan | MONTREAL CANADA | ALTRABETA LLC |
1/13/2022 | 8542326100 | INTEGRATED CIRCUITS: MONOLITHIC ELECTRONIC INTEGRAL CIRCUIT - FLASH ELECTRICALLY ERASABLE REPROGRAMMABLE CONSTANT | 0.36 | 225.85 | Taiwan | BRATISLAVA AIRPORT | KOMPEL JSC |
1/13/2022 | 8542326100 | ELECTRONIC INTEGRATED MONOLITHIC SINGLE-CRYSTAL ASSEMBLED, ELECTRICALLY ERASE REPROGRAMMABLE PERMANENT MEMORY DEVICES, FLASH-ES PROM WITH MEMORY MAXIMUM 512 MBIT, NOT WASTE, NOT SCRAP, MEMORY CAPACITY | 0.02 | 12.29 | Taiwan | VANTAA AIRPORT | GAMMA LIMITED LLC |
1/17/2022 | 8542326100 | ELECTRONIC INTEGRAL CIRCUITS, ELECTRICALLY ERASEABLE, WITH MEMORY UP TO 512 Mbit, FOR INSTALLATION IN ELECTRONIC BOARDS | 7.6 | 3604.86 | Taiwan | KOTKA | MT SYSTEMS LLC |
1/17/2022 | 8542326100 | ELECTRONIC INTEGRAL CIRCUITS, ELECTRICALLY ERASEABLE, WITH MEMORY UP TO 512 Mbit, FOR INSTALLATION IN ELECTRONIC BOARDS | 12.1 | 18155.7 | Taiwan | KOTKA | MT SYSTEMS LLC |
1/24/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 1.42 | 5164.9 | Taiwan | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/17/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 2 V OPERATING TEMPERATURE FROM - 40 TO + 85 64 MB | 0 | 7.12 | Taiwan | HONGKONG AIRPORT | ALTRABETA LLC |