1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. VOLTAGE DRAIN-SOURCE 1000V. SCATTERING POWER 100W. CURRENT 24A. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 16.67 | United States of America | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. POWER DISPOSION 69 W. VOLTAGE DRAIN-SOURCE 100 V. CURRENT 30A. SIZE 5.35 X 6.25 X 1.1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0 | 8.43 | Malaysia | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541100009 | DIODES: BRIDGE RECTIFIER. MAXIMUM PEAK REVERSE VOLTAGE 1600V. PEAK AVERAGE FORWARD CURRENT 55A. DIMENSIONS 63 X 31.6 X 17MM. USED IN ELECTRICAL ENGINEERING | 0.08 | 38.31 | Germany | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541100009 | SEMICONDUCTOR DEVICES: TVS-DIODE. MAXIMUM VOLTAGE 17 V. DIMENSIONS 4.6 X 3.95 X 2.28MM. CURRENT 22 A. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 6.93 | Malaysia | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541210000 | SEMICONDUCTOR DEVICES: NPN-CHANNEL MOS-TRANSISTOR. MAXIMUM POWER DISPOSION 200 MW. VOLTAGE COLLECTOR-EMMITTER 50 V. DRAIN CURRENT 150MA. DIMENSIONS 2 X 1.25 X 0.9MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0 | 9.42 | Thailand | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541490000 | SEMICONDUCTOR DEVICE: OPTOCOUPLE. IS A LED AND PHOTODIO ASSEMBLY. RATED VOLTAGE 5V. OUTPUT VOLTAGE. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. RELATED IN ELECTRICAL ENGINEERING. | 0 | 6.7 | Malaysia | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541100009 | SEMICONDUCTOR DEVICES: RECTIFYING DIODE. REVERSE PEAK REPEATED VOLTAGE 100V, MAXIMUM FORWARD CURRENT 3A. DIMENSIONS: 2.42 X 7.11 X 6.22MM. USED IN ELECTRICAL ENGINEERING | 0.01 | 13.44 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541210000 | SEMICONDUCTOR DEVICES: DIGITAL TRANSISTOR. MAXIMUM POWER DISPOSION 200 MW. VOLTAGE 50 V. DIMENSIONS 2.9 X 1.6 X 1.1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0 | 6.19 | Philippines | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541100009 | SEMICONDUCTOR DEVICE: SWITCHING DIODE, PEAK REVERSE REPEATED VOLTAGE 600V. MAXIMUM CONTINUOUS FORWARD CURRENT 15A, DIMENSIONS 6.73 X 6.22 X 2.26MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.05 | 12.62 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/13/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. POWER DISPOSION 26W. MAXIMUM VOLTAGE 20 V. CURRENT 20A. SERIES OPTIMOS 3. USED IN ELECTRICAL ENGINEERING | 0.01 | 5.18 | Malaysia | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |