1/21/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 1.42 | 5164.6 | Taiwan | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/22/2022 | 8542327500 | INTEGRAL MONOLITHIC MICROSCHEMICS, EEPROM MEMORY ES PROM WITH A VOLUME OF 8 Mbit, NOT RADIATION RESISTANT, DO NOT HAVE THE FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), APPLIED FOR SURFACE MOUNTING ON PRINTED BOARDS IN THE MANUFACTURE OF ELECTRONIC EQUIPMENT, | 1.25 | 5737.16 | Taiwan | HONG KONG | PROISTOK LLC |
1/21/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - FLASH EEPROM (NOR) STORAGE DEVICE WITH MEMORY 32 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0 | 85.95 | Taiwan | ST PETERSBURG RUSSIA | ALKON ELECTRONICS LLC |
1/18/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - FLASH-EEPROM TYPE STORAGE DEVICE WITH MEMORY 128 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 11.31 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/14/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - FLASH EEPROM (NOR) MEMORY DEVICE WITH MEMORY 1 Mbit. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.18 | 86.33 | Taiwan | ST PETERSBURG RUSSIA | ALKON ELECTRONICS LLC |
1/22/2022 | 8542327500 | INTEGRAL MONOLITHIC MICROCIRCUIT, EEPROM MEMORY ES PROM WITH A VOLUME OF 2 Mbit, NOT RADIATION RESISTANT, DO NOT HAVE THE FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), APPLIED FOR SURFACE MOUNTING ON PRINTED BOARDS IN THE MANUFACTURE OF ELECTRONIC EQUIPMENT, | 0.2 | 1690.84 | Taiwan | HONG KONG | PROISTOK LLC |
1/19/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE FLASH EEPROM (NOR) WITH MEMORY 128 Mbit. (OPERATING TEMPERATURE RANGE: -40...+125 C) (NOT HAZARDOUS WASTE) | 0.57 | 1116.6 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE FLASH EEPROM WITH MEMORY 32 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.02 | 24.62 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/29/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM TYPE STORAGE DEVICE WITH A MEMORY SIZE OF 8 MB. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.09 | 80.57 | Taiwan | HONG KONG | IC COMPONENT LLC |
1/6/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE - FLASH EEPROM (PPVM - CONFIGURATION MEMORY) WITH A MEMORY CAPACITY OF 64 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.32 | 1350.74 | Taiwan | SINGAPORE AIRPORT | SVARNOY LLC |