1/28/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A MEMORY DEVICE (FPVM-CONFIGURATION MEMORY) OF THE FLASH-EEPROM TYPE WITH A MEMORY SIZE OF 8 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.06 | 67.02 | Philippines | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/27/2022 | 8542327500 | EEPROM MEMORY CHIP VOLUME 8 KBIT, SERIAL INTERFACE, SUPPLY VOLTAGE 1.7-5.5V | 4.2 | 189.48 | Philippines | MOSCOW RUSSIA | EPS RUS LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - CONFIGURATION MEMORY (MEMORY FLASH-EEPROM) WITH A MEMORY CAPACITY OF 1.6 MBIT. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.07 | 84.48 | Philippines | SINGAPORE AIRPORT | SVARNOY LLC |
1/17/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE EEPROM (EEPROM) WITH A MEMORY SIZE OF 1 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 10.17 | Philippines | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/24/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE EEPROM (EEPROM) WITH MEMORY 128 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 18.08 | Philippines | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/6/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - CONFIGURATION MEMORY (MEMORY FLASH-EEPROM) WITH A MEMORY CAPACITY OF 1.6 MBIT. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.04 | 78.79 | Philippines | SINGAPORE AIRPORT | SVARNOY LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - CONFIGURATION MEMORY (MEMORY FLASH-EEPROM) WITH A MEMORY CAPACITY OF 1.6 MBIT. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.02 | 48.51 | Philippines | SINGAPORE AIRPORT | SVARNOY LLC |
1/27/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE FLASH EEPROM WITH MEMORY 16 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.43 | 869.68 | Philippines | ST PETERSBURG RUSSIA | VOSTOK JSC |
1/14/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE FLASH EEPROM (NOR) WITH MEMORY 4 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.03 | 56.67 | Philippines | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - CONFIGURATION MEMORY (MEMORY FLASH-EEPROM) WITH A MEMORY CAPACITY OF 1.6 MBIT. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.04 | 53.79 | Philippines | SINGAPORE AIRPORT | SVARNOY LLC |