1/24/2022 | 8541290000 | TRANSISTOR IPD60R3K3C6ATMA1. N-CHANNEL MOSFET. THE MOS STRUCTURE CONSISTS OF A METAL AND A SEMICONDUCTOR SEPARATED BY A LAYER OF SILICON DIOXIDE (SIO2). IN THE GENERAL CASE, THE STRUCTURE IS CALLED MIS (METAL - DIELECTRIC - SEMICONDUCTOR). REPRESENTS | 1.39 | 416.1 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/26/2022 | 8541290000 | TRANSISTOR STD2HNK60Z N-CHANNEL MOSFET. THE MOS STRUCTURE CONSISTS OF A METAL AND A SEMICONDUCTOR SEPARATED BY A LAYER OF SILICON DIOXIDE (SIO2). IN THE GENERAL CASE, THE STRUCTURE IS CALLED MIS (METAL - DIELECTRIC - SEMICONDUCTOR). REPRESENTS | 67.01 | 19112.5 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/18/2022 | 8541290000 | TRANSISTOR FQD2N100TM. N-CHANNEL MOSFET. THE MOS STRUCTURE CONSISTS OF A METAL AND A SEMICONDUCTOR SEPARATED BY A LAYER OF SILICON DIOXIDE (SIO2). IN THE GENERAL CASE, THE STRUCTURE IS CALLED MIS (METAL - DIELECTRIC - SEMICONDUCTOR). REPRESENTS | 1.31 | 641.75 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/18/2022 | 8541290000 | IRFR9024NTRPBF TRANSISTOR. P-CHANNEL MOSFET. THE MOS STRUCTURE CONSISTS OF A METAL AND A SEMICONDUCTOR SEPARATED BY A LAYER OF SILICON DIOXIDE (SIO2). IN THE GENERAL CASE, THE STRUCTURE IS CALLED MIS (METAL - DIELECTRIC - SEMICONDUCTOR). REPRESENTS | 1.25 | 360.4 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/29/2022 | 8541410009 | SPARE PARTS FOR DIESEL HEAT GENERATORS: THE PHOTOCELL IS DESIGNED TO CONTROL THE COMBUSTION PROCESS IN THE COMBUSTION CHAMBER. ELECTRONIC DEVICE WHICH OPERATION IS BASED ON THE CONVERSION OF LIGHT ENERGY INTO ELECTRICITY. | 0.6 | 30.1 | China | NINGBO CHINA | R CLIMATE LLC |
1/14/2022 | 8541100009 | DIODES FOR DIESEL ENGINE GENERATOR FOR GOMACO Paver MOD.GHP-2800, ROAD CONSTRUCTION MACHINERY: | 0.2 | 45.56 | United Kingdom | MOSCOW RUSSIA | KVINTMADI JSC |
1/18/2022 | 8541290000 | TRANSISTOR IPD60R3K3C6ATMA1. N-CHANNEL MOSFET. THE MOS STRUCTURE CONSISTS OF A METAL AND A SEMICONDUCTOR SEPARATED BY A LAYER OF SILICON DIOXIDE (SIO2). IN THE GENERAL CASE, THE STRUCTURE IS CALLED MIS (METAL - DIELECTRIC - SEMICONDUCTOR). REPRESENTS | 27.8 | 8253 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/13/2022 | 8541100009 | DIODE PANEL. DIODES ON THE PANEL, DOES NOT CONTAIN LIGHT AND PHOTO EMITTING ELEMENTS 3A, 130V, 450W, NOT CUT INTO PLATES, NOT SCRAP OF ELECTRICAL EQUIPMENT. INTENDED FOR USE ON DIESEL LOCOMOTIVES MANUFACTURED BY JSC UK BMZ CERTIFIED RS FZhT | 0.54 | 347.29 | United States of America | ERI | MANAGEMENT COMPANY BRYANSK MACHINE BUILDING PLANT JSC |
1/14/2022 | 8541100009 | DIODE PANEL. DIODES ON THE PANEL, DOES NOT CONTAIN LIGHT AND PHOTO EMITTING ELEMENTS 3A, 130V, 450W, NOT CUT INTO PLATES, NOT SCRAP OF ELECTRICAL EQUIPMENT. INTENDED FOR USE ON DIESEL LOCOMOTIVES MANUFACTURED BY JSC UK BMZ CERTIFIED RS FZhT | 0.54 | 350.3 | United States of America | ERI | MANAGEMENT COMPANY BRYANSK MACHINE BUILDING PLANT JSC |
1/31/2022 | 8541510000 | SPARE PARTS FOR PREVIOUSLY IMPORTED CERTIFIED OUTBOARD DIESEL-HYDRAULIC LOCOMOTIVE | 0.5 | 113.02 | Poland | SVERKLYANY | BECKER MINING SYSTEMS RUS LLC |