1/24/2022 | 3818001000 | DOPOED SILICON, CHEMICAL COMPOUNDS: SILICON WAfer (SUBSTRATE), HAS A ROUND SHAPE, STANDARD FOR SEMICONDUCTOR WAFS, DIAMETER 150 MM, WATER THICKNESS IS FROM 300 TO 4000 MKM, SUPPLIED FOR SCIENTIFIC RESEARCH | 6 | 8003.6 | Japan | MOSCOW RUSSIA | TECHMASHIMPORT LLC |
1/19/2022 | 3818001000 | SILICON DOPED. 6TPP1051 TYPE 6TPP1051 SINGLE CRYSTAL SILICON WATER: BORON DOPED (P TYPE CONDUCTIVITY), 8 (200 MM) DIAMETER, 725 MM (0.725 MM) THICK. | 118.95 | 17620.1 | China | HANZHOU CHINA | FERROTEK NORD JSC |
1/6/2022 | 3818001000 | SILICON DOPED. 6TPP1051 TYPE 6TPP1051 SINGLE CRYSTAL SILICON WATER: BORON DOPED (P TYPE CONDUCTIVITY), 8 (200 MM) DIAMETER, 725 MM (0.725 MM) THICK. | 100.65 | 14572.8 | China | HANZHOU CHINA | FERROTEK NORD JSC |
1/27/2022 | 3818001000 | SILICON CARBIDE PLATE (CAS# 409-21-2), DIAMETER 153+0.5MM. CHEMICAL FORMULA: CSI, CONTENT 100% SILICON CARBIDE. ALLOYED WITH NITROGEN. POLISHED ON TWO SIDES. WITHOUT EPITAXIAL LAYERS. IS N-TYPE SEMICONDUCTOR MATERIAL, | 0.8 | 13814.6 | China | BEIJING CHINA | MONOCRISTALL LLC |