1/19/2022 | 8542326100 | MICROCIRCUITS - MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT STORAGE DEVICES MRAM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF 1 Mbit FOR USE IN PERSONAL COMPUTERS. | 1.11 | 9743.1 | China | MOSCOW RUSSIA | SIBELKOM LOGISTIC LLC |
1/29/2022 | 8542326100 | Flash Es PPZ with memory capacity no more than 512 mibite: electrically erasable rewritable constant flash device in the form of an integral chip, memory capacity 0.064Mbits, voltage 2.7-3.5B art: MB85RS64PNF-G-JNERE1 - 3000 pcs | 1.5 | 1522.1 | Japan | MOSCOW RUSSIA | DIDZHIKOM LLC |
1/11/2022 | 8542326100 | FLASH-ES PROM WITH A MEMORY OF NO MORE THAN 512 MBIT, INTEGRATED MONOLITHIC CIRCUIT WITH THE FUNCTION OF EEPROM-MEMORY, FIELD OF APPLICATION-USED IN FIBER-OPTIC DEVICES, (NON-MILITARY PURPOSES), : | 2.12 | 5611.64 | Taiwan | MOSCOW RUSSIA | SCIENTIFIC AND TECHNICAL ASSOCIATION IRE POLYUS LLC |
1/21/2022 | 8542326100 | FLASH-ES PROM WITH A MEMORY OF NO MORE THAN 512 MBIT, INTEGRATED MONOLITHIC CIRCUIT WITH THE FUNCTION OF EEPROM-MEMORY, FIELD OF APPLICATION-USED IN FIBER-OPTIC DEVICES, (NON-MILITARY PURPOSES), : | 0.8 | 3480.99 | Thailand | MOSCOW RUSSIA | SCIENTIFIC AND TECHNICAL ASSOCIATION IRE POLYUS LLC |
1/27/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE FLASH EEPROM WITH MEMORY 16 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.43 | 869.68 | Philippines | ST PETERSBURG RUSSIA | VOSTOK JSC |
1/9/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.06 | 1724.79 | Thailand | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/9/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.03 | 286.97 | Thailand | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/21/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.08 | 1021.3 | Thailand | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/21/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - FLASH EEPROM (NOR) STORAGE DEVICE WITH MEMORY 32 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0 | 85.95 | Taiwan | ST PETERSBURG RUSSIA | ALKON ELECTRONICS LLC |
1/12/2022 | 8542326100 | FLASH-ELECTRICALLY ERASUABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE, THAT IS A MONOLITHIC DIGITAL INTEGRAL CIRCUIT, ASSEMBLED, WITH OUTPUTS, FOR INDUSTRIAL ELECTRONICS SYSTEMS, COMPUTER EQUIPMENT. MEMORY 64MBIT; NAPR | 0.67 | 4256.48 | Philippines | HONG KONG | VEST OST LLC |