1/26/2022 | 8541210000 | TRANSISTORS: A MODULE OF SEMICONDUCTOR TRANSISTORS POWER DISSIPATION 0.15W FOR INSTALLATION AS A PART OF INDUSTRIAL DEVICES | 0.29 | 145.26 | China | MOSCOW RUSSIA | KOMPEL JSC |
1/24/2022 | 8541210000 | TRANSISTOR BC817-40.215. BIPOLAR REVERSE CONDUCTIVITY TRANSISTOR (NPN) IS A THREE-ELECTRODE SEMICONDUCTOR DEVICE WITH TWO PARALLEL NP JUNCTIONS AT A CLOSE DISTANCE. | 0.84 | 233.59 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/10/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 0.6 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: BIPOLAR TRANSISTOR, SEMICONDUCTOR TYPE - SILICON | 0.02 | 741.82 | China | TIF RIVER FOLLS | STOUT LLC |
1/3/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, DISPOSED POWER NOT MORE THAN 1 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES, NON-MILITARY PURPOSE: | 0.01 | 18.55 | China | KRANJ | VOSTOK JSC |
1/3/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, DISPOSED POWER NOT MORE THAN 1 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES, NON-MILITARY PURPOSE: | 0 | 9.44 | China | KRANJ | VOSTOK JSC |
1/3/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, DISPOSED POWER NOT MORE THAN 1 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES, NON-MILITARY PURPOSE: | 0.03 | 58.19 | China | KRANJ | VOSTOK JSC |
1/3/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, DISPOSED POWER NOT MORE THAN 1 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES, NON-MILITARY PURPOSE: | 0.03 | 38.99 | China | KRANJ | VOSTOK JSC |
1/11/2022 | 8541210000 | TRANSISTOR, POWER DISSIPATION 0.65 WATT, ARE USED IN THE PRE-OUTPUT STAGES OF DEVICES FOR POWER AMPLIFICATION IN CIVIL APPLIANCES. NOT FOR MILITARY PURPOSES. NOT APPLIED IN FIRE AUTOMATIC EQUIPMENT, DO NOT HAVE THE FUNCTION | 5 | 1752.34 | China | SAR HONG KONG | MICROSAN LLC |
1/26/2022 | 8541210000 | SEMICONDUCTOR DEVICES: PNP-CHANNEL MOSFET TRANSISTOR. VOLTAGE COLLECTOR-EMTTER -45V, CURRENT -500MA. SCATTERING POWER 0.31W. DIMENSIONS: 3 X 1.4 X 1MM. USED IN ELECTRICAL ENGINEERING | 0.01 | 15.39 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/26/2022 | 8541210000 | SEMICONDUCTOR DEVICES: TRANSISTORS, NOT A SCRAP OF ELECTRICAL EQUIPMENT, USED FOR SURFACE MOUNTING ON PRINTED BOARDS IN CONSTRUCTION OF RADIO ELECTRONIC EQUIPMENT. | 0.28 | 460.47 | China | HONG KONG | ONSHOR WIND LLC |